IRLR7843TRRPBF datasheet, PDF - EEWORLD Datasheet

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IRLR7843TRRPBF: Descriptionmosfet N-CH 30v 161a dpak; CategoryDiscrete semiconductor The transistor; File Size366KB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRLR7843TRRPBF Overview

mosfet N-CH 30v 161a dpak

IRLR7843TRRPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA
package instruction	LEAD FREE, PLASTIC, DPAK-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	1440 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	161 A
Maximum drain current (ID)	30 A
Maximum drain-source on-resistance	0.0033 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	140 W
Maximum pulsed drain current (IDM)	620 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Applications

High Frequency Synchronous Buck

Converters for Computer Processor Power

High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

Lead-Free

Benefits

Very Low RDS(on) at 4.5V V

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

HEXFET

Power MOSFET

IRLR7843PbF

IRLU7843PbF

3.3m

PD - 95440B

DSS

30V

DS(on)

max

34nC

D-Pak

IRLR7843PbF

I-Pak

IRLU7843PbF

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

= 100°C

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Max.

± 20

161

620

140

0.95

-55 to + 175

300 (1.6mm from case)

Units

Maximum Power Dissipation

113

W/°C

°C

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

Typ.

Max.

1.05

110

Units

°C/W

gÃ

–––

Notes

through

are on page 11

www.irf.com

04/30/08

IRLR7843TRRPBF Related Products

	IRLR7843TRRPBF	IRLU7843	IRLU7843-701PBF	IRLR7843TRR	IRLR7843TRL	IRLR7843CTRLPBF	IRLR7843CTRRPBF	IRLR7843HR
Description	mosfet N-CH 30v 161a dpak	HEXFET Power MOSFET	mosfet N-CH 30v 161a ipak	Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3	Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3	Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3	Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3	Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Is it Rohs certified?	conform to	incompatible	-	incompatible	-	conform to	conform to	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	TO-252AA	TO-251AA	-	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
package instruction	LEAD FREE, PLASTIC, DPAK-3	IN-LINE, R-PSIP-T3	-	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	-	3	3	3	3	3
Reach Compliance Code	unknown	compliant	-	unknown	unknown	unknown	unknown	compliant
ECCN code	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	1440 mJ	1440 mJ	-	1440 mJ	1440 mJ	1440 mJ	1440 mJ	1440 mJ
Shell connection	DRAIN	DRAIN	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	-	30 V	30 V	30 V	30 V	30 V
Maximum drain current (ID)	30 A	30 A	-	30 A	30 A	30 A	30 A	30 A
Maximum drain-source on-resistance	0.0033 Ω	0.0033 Ω	-	0.0033 Ω	0.0033 Ω	0.0033 Ω	0.0033 Ω	0.0033 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA	TO-251AA	-	TO-252AA	TO-252AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 code	R-PSSO-G2	R-PSIP-T3	-	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e0	-	e0	e0	e3	e3	e0
Humidity sensitivity level	1	1	-	1	1	1	1	1
Number of components	1	1	-	1	1	1	1	1
Number of terminals	2	3	-	2	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	245	-	NOT SPECIFIED	260	260	260	245
Polarity/channel type	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	620 A	620 A	-	620 A	620 A	620 A	620 A	620 A
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
surface mount	YES	NO	-	YES	YES	YES	YES	YES
Terminal surface	MATTE TIN OVER NICKEL	Tin/Lead (Sn/Pb)	-	TIN LEAD	TIN LEAD	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	TIN LEAD
Terminal form	GULL WING	THROUGH-HOLE	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	-	NOT SPECIFIED	NOT SPECIFIED	30	30	30
transistor applications	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON

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