Ordering number:ENN866C
NPN Epitaxial Planar Silicon Transistor
2SC3000
HF Amplifier Applications
Features
· FBET series.
· High f
T
and small C
re
.
Package Dimensions
unit:mm
2003B
[2SC3000]
5.0
4.0
4.0
0.45
0.5
0.6
2.0
0.45
0.44
14.0
1
2
3
5.0
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
1.3
1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
Ratings
30
20
5
30
250
125
–55 to +125
Unit
V
V
V
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Base-to-Collector Time Constant
Noise Figure
Power Gain
Symbol
ICBO
IEBO
hFE
fT
Cre
rbb'CC
NF
PG
VCB=10V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
VCE=6V, IC=1mA
VCB=6V, f=1MHz
VCE=6V, IC=1mA, f=31.9MHz
VCE=6V, IC=1mA, f=100MHz
VCE=6V, IC=1mA, f=100MHz
Rank
hFE
D
60 to 120
E
100 to 200
F
160 to 320
60*
200
0.7
320
1.1
15
3.0
25
1.4
22
Conditions
Ratings
min
typ
max
0.1
0.1
320*
MHz
pF
ps
dB
dB
Unit
µA
µA
* : The 2SC2300 are classified by 1mA h
FE
as follows :
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21004TN (KT)/N3098HA (KT)/4147KI/3125MW, TS No.866–1/5
2SC3000
NF, PG Test Circuit
to 5pF
to 30pF
INPUT
50Ω
0.01µF
L1
to 22pF
to
22
pF
to 30pF
L3
L2 0.01µF
VCE
OUTPUT
50Ω
VBE
L1 : 1mmø plated wire, 10mmø 5T, tapped at 2T from VBE.
L2 : 1mmø plated wire, 10mmø 7T, tapped at 1T from VCE.
L3 : 1mmø enameled wire, 10mmø 3T.
5
IC -- VCE
30
µA
100
IB -- VBE
VCE=6V
Collector Current, IC – mA
4
25
µA
20µA
Base Current, IB –
µA
80
3
60
15µA
2
40
10µA
1
5µA
20
0
0
IB=0
2
4
6
8
10
ITR05205
0
0
0.2
0.4
0.6
0.8
1.0
ITR05206
Collector-to-Emitter Voltage, VCE – V
1000
7
5
Base-to-Emitter Voltage, VBE – V
2
hFE -- IC
VCE=6V
Gain-Bandwidth Product, fT – MHz
f T -- IC
1000
7
5
DC Current Gain, hFE
3
2
VCE =12
V
3V
6V
100
7
5
3
2
3
2
100
7
10
0.1
5
2
3
5
7 1.0
2
3
5
7 10
2
3
5
2
3
5
7 1.0
2
3
5
7 10
2
3
Collector Current, IC – mA
5
ITR05207
2
Collector Current, IC – mA
7 100
ITR05208
5
Cre -- VCB
f=1MHz
Base-to-Collector Time Constant, rbb' Cc – ps
rbb'Cc -- IC
f=31.9MHz
Reverse Transfer Capacitance, Cre – pF
3
2
100
7
5
3
2
1.0
7
5
V
CE =
3V
10
7
5
3
2
0.1
2
3
5
7
12V
6V
3
2
1.0
2
3
5
7
10
2
3
5
1.0
2
3
5
7
10
2
Collector-to-Base Voltage, VCB – V
ITR05209
Collector Current, IC – mA
ITR05210
No.866–2/5
2SC3000
1.0
7
VCE(sat) -- IC
IC
=10
IB
Collector Dissipation, P
C
– mW
280
250
240
PC -- Ta
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
5
3
2
200
160
0.1
7
5
3
2
1.0
2
3
5
7
10
2
3
5
120
80
40
0
Collector Current, IC – mA
5
3
2
100
ITR05211
5
3
10
7
0
20
40
60
80
100
120
140
Ambient Temperature, Ta – ˚C
ITR05212
Input Admittance yie -- IC
VCE=6V
f=1MHz
g ie
Output Admittance yoe -- IC
VCE=6V
f=1MHz
7
goe –
µS,
coe – pF
2
5
g oe
gie – mS
0.1
7
5
100
7
5
cie – pF
c ie
3
c oe
3
2
3
2
2
0.01
3
5
7
10
1.0
3
5
7
Collector Current, IC – mA
2
1.0
2
3
5
10
ITR05213
2
5
7
Collector Current, IC – mA
1.0
2
3
5
10
ITR05214
7
Input Admittance yie -- IC
VCE=6V
f=10MHz
Output Admittance yoe -- IC
VCE=6V
f=10MHz
gie
100
1.0
7
5
3
goe – mS, coe – pF
7
2
gie – mS
cie – pF
cie
5
3
2
g oe
10
7
5
3
2
0.1
7
5
3
3
5
7
10
7
3
2
c oe
5
3
10
ITR05215
7
1.0
3
5
7
Collector Current, IC – mA
2
1.0
2
3
5
Collector Current, IC – mA
5
3
2
1.0
2
3
5
10
ITR05216
7
Input Admittance yie -- VCE
cie
IC=1mA
f=100MHz
Reverse Transfer Admittance yre -- VCE
IC=1mA
f=100MHz
5
3
2
10
gie – mS, cie – pF
7
gre –
µS
100
7
5
3
2
1.0
7
5
3
2
5
gr
e
3
2
gie
1.0
1.0
10
2
3
5
7
0.1
7
1.0
2
3
5
7
10
2
Collector-to-Emitter Voltage, VCE – V
10
2
ITR05217
Collector-to-Emitter Voltage, VCE – V
ITR05218
No.866–3/5
cre – pF
cre
2SC3000
3
2
Forward Transfer Admittance yfe -- VCE
gfe
IC=1mA
f=100MHz
5
3
Output Admittance yoe -- VCE
IC=1mA
f=100MHz
coe
gfe, bfe – mS
10
7
5
--bfe
goe – mS, coe – pF
2
1.0
7
5
3
2
go
e
3
2
1.0
1.0
2
3
5
7
10
2
ITR05219
0.1
1.0
2
3
5
7
10
2
Collector-to-Emitter Voltage, VCE – V
5
3
2
Collector-to-Emitter Voltage, VCE – V
ITR05220
3
Input Admittance yie -- IC
VCE=6V
f=100MHz
Reverse Transfer Admittance yre -- IC
VCE=6V
f=100MHz
3
2
2
gie – mS, cie – pF
c ie
gre –
µS
100
1.0
7
5
cre
7
g ie
3
2
gre
7
5
5
1.0
3
5
7
1.0
2
3
5
7
3
3
5
7
1.0
2
3
5
7
3
Collector Current, IC – mA
100
7
5
3
2
ITR05221
5
3
Collector Current, IC – mA
ITR05222
Forward Transfer Admittance yfe -- IC
VCE=6V
f=100MHz
Output Admittance yoe -- IC
VCE=6V
f=100MHz
gfe, bfe – mS
g fe
goe – mS, coe – pF
2
coe
e
--b
f
1.0
7
5
3
2
g oe
10
7
5
3
2
3
5
7
0.1
Collector Current, IC – mA
30
28
26
1.0
2
3
5
7
3
5
7
ITR05223
Collector Current, IC – mA
1.0
2
3
5
7
ITR05224
PG, NF -- IC
VCE=6V
f=100MHz
at Test Circuit.
PG
Power Gain, PG – dB
Noise Figure, NF – dB
24
22
20
18
16
6
4
2
0
3
5
7
1.0
2
3
5
7
10
ITR05225
NF
Collector Current, IC – mA
No.866–4/5
cre – pF
10
2SC3000
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2004. Specifications and information herein are subject
to change without notice.
PS No.866–5/5
京公网安备 11010802033920号
EEWORLD
