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DAP202G

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size136KB,3 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric View All

DAP202G Overview

Rectifier Diode,

DAP202G Parametric

Parameter NameAttribute value
Objectid145151128972
Reach Compliance Codeunknown
Country Of OriginMainland China
YTEOL6.2
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G2
Maximum non-repetitive peak forward current4 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage70 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
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