VP1316N2 datasheet, PDF - EEWORLD Datasheet

VP1316N2: DescriptionTRANSISTOR,MOSFET,P-CHANNEL,160V V(BR)DSS,100MA I(D),TO-39; CategoryDiscrete semiconductor The transistor; File Size283KB，4 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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VP1316N2 Overview

TRANSISTOR,MOSFET,P-CHANNEL,160V V(BR)DSS,100MA I(D),TO-39

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	114527018
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	Single
Maximum drain current (Abs) (ID)	0.1 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	3 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

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