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PS200R_04

Description
2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size37KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15

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DATA SHEET
PS200R~PS2010R
FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE
FEATURES
• High current capability.
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Low leakage.
• Exceeds environmental standards of MIL-S-19500/228
• Fast switching for high efficiency.
.300(7.6)
1.0(25.4)MIN.
50 to 1000 Volts
CURRENT
2.0 Amperes
DO-15
Unit: inch(mm)
.034(.86)
.028(.71)
• Pb free product are available : 99% Sn above can meet Rohs
environment substance directive request
.230(5.8)
.140(3.6)
MECHANICALDATA
Case: Molded plastic, DO-15
Terminals: Axial leads, solderable to MIL-STD-202G,Method 208
Polarity: Color Band denotes cathode end
Mounting Position: Any
Weight: 0.0154 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
PA R A M E TE R
M a xi um R e curre nt P e a k R e ve rse V o l a g e
m
t
M a xi um R M S V o l a g e
m
t
M a xi um D C B l cki g V o l a g e
m
o
n
t
M a xi um A ve ra g e F o rw a rd C urre nt . 7 5 "(9 . m m )
m
3
5
l a d l ng t a t T
A
= 5 5
O
C
e
e
h
P e a k F o rw a rd S urg e C urre nt : 8 . m s si g l ha l
3
n e
f
si e -w a ve sup e ri p o se d o n ra t d l a d (JE D E C
n
m
e o
m et od)
h
M a xi um F o rw a rd V o l a g e a t 2 . A
m
t
0
M a xi um D C R e ve rse C urre nt T
A
= 2 5
O
C
m
a t R a t d D C B l cki g V o l a g e T
A
= 1 0 0
O
C
e
o
n
t
M a xi um R e ve rse R e co ve ry Ti e (N o t 1 )
m
m
e
Typ i a l Junct o n ca p a ci a nce (N o t 2 )
c
i
t
e
Typ i a l T he rm a l R e si t nce (N o t 3 )
c
sa
e
O p e ra t ng Junct o n a nd S t ra g e Te m p e ra t re R a ng e
i
i
o
u
S Y M B O L P S 200R P S 201R P S 202R
V
RRM
V
RM S
V
DC
A
I
V
1.0(25.4)MIN.
.104(2.6)
P S 204R
400
280
400
2.
0
P S 206R P S 208R
600
420
600
800
560
800
P S 2010R
1000
700
1000
UNI S
T
V
V
V
A
50
35
50
100
70
100
200
140
200
I
SM
F
70
A
V
F
1.
3
5.
0
500
150
35
40
-5 5 T O + 1 5 0
O
V
R
I
uA
T
R R
C
J
R
θ
JA
T
J
,
S TG
T
250
500
ns
pF
C /W
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, I
rr
=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient at 0.375"(9.5mm) lead length with both leads equally heatsink.
STAD-FEB.12.2004
PAGE . 1
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