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V73CBG02168RELJJ11E

Description
DDR DRAM,
Categorystorage    storage   
File Size2MB,63 Pages
ManufacturerProMOS Technologies Inc
Download Datasheet Parametric View All

V73CBG02168RELJJ11E Overview

DDR DRAM,

V73CBG02168RELJJ11E Parametric

Parameter NameAttribute value
Objectid7215375329
package instructionTFBGA,
Reach Compliance Codecompliant
Country Of OriginMainland China
ECCN codeEAR99
Date Of Intro2018-06-20
YTEOL5.1
access modeMULTI BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PBGA-B96
length13 mm
memory density2147483648 bit
Memory IC TypeDDR3L DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals96
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature95 °C
Minimum operating temperature
organize128MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)1.45 V
Minimum supply voltage (Vsup)1.283 V
Nominal supply voltage (Vsup)1.35 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width9 mm

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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