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MBR25H60CT-E3/4W

Description
diode schottky 60v 15a to220ab
CategoryDiscrete semiconductor    diode   
File Size145KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

MBR25H60CT-E3/4W Overview

diode schottky 60v 15a to220ab

MBR25H60CT-E3/4W Parametric

Parameter NameAttribute value
MakerVishay
package instructionR-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage60 V
Maximum reverse current100 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
2
MBR25HxxCT
PIN 1
PIN 3
PIN 2
CASE
3
1
MBRF25HxxCT
PIN 1
PIN 3
PIN 2
2
3
1
TO-263AB
K
2
1
MBRB25HxxCT
PIN 1
PIN 2
TYPICAL APPLICATIONS
K
HEATSINK
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
2 x 15 A
35 V to 60 V
150 A
0.54 V, 0.60 V
100 μA
175 °C
Case:
TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward
rectified current (Fig. 1)
total device
per diode
I
F(AV)
E
AS
I
FSM
I
RRM
1.0
SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT
V
RRM
V
RWM
V
DC
35
35
35
45
45
45
30
A
15
80
150
0.5
mJ
A
A
50
50
50
60
60
60
V
UNIT
Non-repetitive avalanche energy per diode
at 25 °C, I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode
at t
p
= 2.0 μs, 1 kHz
Revision: 27-Jun-12
Document Number: 88789
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

MBR25H60CT-E3/4W Related Products

MBR25H60CT-E3/4W MBRB25H35CT-E3/45
Description diode schottky 60v 15a to220ab diode schottky 35v 15a to263ab
Maker Vishay Vishay
package instruction R-PSFM-T3 R-PSSO-G2
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Other features FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS FREEWHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS
application EFFICIENCY EFFICIENCY
Shell connection CATHODE CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.85 V 0.54 V
JEDEC-95 code TO-220AB TO-263AB
JESD-30 code R-PSFM-T3 R-PSSO-G2
Maximum non-repetitive peak forward current 150 A 150 A
Number of components 2 2
Phase 1 1
Number of terminals 3 2
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 15 A 15 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Maximum repetitive peak reverse voltage 60 V 35 V
surface mount NO YES
technology SCHOTTKY SCHOTTKY
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
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