EEWORLDEEWORLDEEWORLD

Part Number

Search

A12161F

Description
Array/Network Resistor, Bussed, Metal Glaze/thick Film, 0.125W, 160ohm, 200V, 1% +/-Tol, -100,100ppm/Cel,
CategoryPassive components    The resistor   
File Size478KB,5 Pages
ManufacturerFenghua (HK) Electronics Ltd.
Download Datasheet Parametric View All

A12161F Overview

Array/Network Resistor, Bussed, Metal Glaze/thick Film, 0.125W, 160ohm, 200V, 1% +/-Tol, -100,100ppm/Cel,

A12161F Parametric

Parameter NameAttribute value
Objectid805057279
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL7.25
structureMiniature
Lead length3.5 mm
lead spacing2.54 mm
Network TypeBussed
Number of terminals12
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package height5.08 mm
Package length27.94 mm
Package formSIP
Package width3 mm
Rated power dissipation(P)0.125 W
resistance160 Ω
Resistor typeARRAY/NETWORK RESISTOR
seriesLEAD NETWORK RES
technologyMETAL GLAZE/THICK FILM
Temperature Coefficient100 ppm/°C
Tolerance1%
Operating Voltage200 V
THICK FILM NETWORK RESISTOR
THICK FILM NETWORK RESISTOR
BRIEF INTRODUCTION
Miniature, high density assembly.
Stable electrical capability, high reliability.
Combinations of different ohmic
value are available
R oHS
RoHS compliant
ORDER
A
H
08
4
7
2
/
J
Circuits
Code
A
B
C
D
E
F
G
H
T
Power Rating
Code
No
Mark
H
Power
1/8W
Pins
Resistance
Value Code
(E
24
)
,
Resistance
Value Code
A
E
B
F
C
H
D
T
G
Code of
pin distance
2.54mm
No
mark
Y
1.778mm
04~14
1/4W
Three digits (E-24
series):
The first two digits
are significant fig-
ures and the third
one denotes nu-
mber of zeros.
1
When it is the type of A,
B,C, D or G, there is no
mark.
When it is the type of E,
F,H or T, the expression
is same as Resistance
Value Codel .
Resistance
Tolerance Code
Code
F
G
J
J(
Jumper)
Lead-free Level
No Contained
Lead
mark
P
Termination
Lead-free
Tolerance
1%
2%
5%
50m
Outer coating
CONSTRUCTION AND DIMENSIONS
unit:mm
A
Code
a
Normal dimension
2.54 (n-1)+2.50max
A B C D
E F G H
Type
T
c
d
e
f
g
p
Type
5.08max
8.50max
Special dimension
1.778 (n-1)+3.20max
A B C D
E F G H
Type
T
Type
5.08max
8.50max
a
Conductor
Ceramic substrate
472
/
Resistance/
Protection coating
Lead pin
b
:
Note: The white diamond marking means the first pin.
c
3.00max
0.50 0.1
3.50 0.5
0.25 0.1
2.54 (n-1) 0.3
2.54 0.1
3.00max
0.50 0.1
3.50 0.5
0.30 0.1
1.778 (n-1) 0.3
1.778 0.1
d
1
p
g
n
f
e
A
472J
b
1
Everspin MRAM optimizes system energy consumption
Technologies such as MRAM can significantly reduce total system energy consumption compared to EEPROM or flash. For many wireless and portable applications, especially in the growing Internet of Thing...
是酒窝啊 Industrial Control Electronics
The impact of 5g wireless network on the development of e-sports market
E-sports has received a lot of attention around the world. This form of competition through computer games, video games, and smartphone games is considered a sport and is growing globally. From the si...
成都亿佰特 Electronics Design Contest
Anlu SparkRoad Development Board Review (9) Use of on-chip SDRAM, TD debugging function
The FPGA of Anlu EG4S20 has built-in SDRAM. If necessary, you can directly use the on-chip SDRAM to avoid external SDRAM occupying many pin resources and save the work of SDRAM layout and wiring. In t...
cruelfox Domestic Chip Exchange
Introduction to the method of board-level online compilation and downloading of C6000 DSP code
Traditional C6000 DSP software is compiled and debugged on a WINDOWS PC through CCS. After testing, the compiled executable file is burned into FLASH. By setting the DSP startup mode to start from FLA...
fish001 Microcontroller MCU
Working principle of lithium battery equalization circuit
[i=s] This post was last edited by qwqwqw2088 on 2019-2-11 14:23 Edit[/i] [size=4][color=#000000][backcolor=white] The development of new energy and electric vehicles will use lithium batteries with r...
qwqwqw2088 Analogue and Mixed Signal
[SAMR21 new gameplay] 31. Using NVM storage
[i=s]This post was last edited by dcexpert on 2019-10-17 10:55[/i]In SAMR21, part of the flash space can be used to simulate EEPROM, which is called NVM (Non-Volatile Memory). Using EEPROM is simpler ...
dcexpert MicroPython Open Source section

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号