Freescale Semiconductor
Technical Data
Document Number: AFT27S006N
Rev. 2, 9/2014
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 28.8 dBm RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 728 to 3600 MHz.
2100 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Vdc,
I
DQ
= 70 mA, P
out
= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
(1)
Frequency
2110 MHz
2140 MHz
2170 MHz
G
ps
(dB)
22.2
22.8
22.5
D
(%)
18.3
19.8
20.2
Output PAR
(dB)
9.2
9.5
9.3
ACPR
(dBc)
--42.3
--44.6
--46.0
IRL
(dB)
--14
--17
--13
AFT27S006NT1
728–3600 MHz, 28.8 dBm Avg., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
2600 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Vdc,
I
DQ
= 70 mA, P
out
= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
(1)
Frequency
2500 MHz
2600 MHz
2700 MHz
G
ps
(dB)
20.4
22.0
20.9
D
(%)
19.4
21.2
20.3
Output PAR
(dB)
9.5
9.1
8.5
ACPR
(dBc)
--44.0
--42.5
--40.9
IRL
(dB)
--7
--16
--7
RF
in
/V
GS
PLD-
-1.5W
PLASTIC
RF
out
/V
DS
2300 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Vdc,
I
DQ
= 70 mA, P
out
= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
(1)
Frequency
2300 MHz
2350 MHz
2400 MHz
G
ps
(dB)
22.9
23.5
23.0
D
(%)
20.9
21.5
22.4
Output PAR
(dB)
9.8
9.4
8.9
ACPR
(dBc)
--41.0
--40.8
--41.0
IRL
(dB)
--10
--24
--11
(Top View)
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
Figure 1. Pin Connections
700 MHz
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Vdc,
I
DQ
= 65 mA, P
out
= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
(1)
Frequency
728 MHz
748 MHz
768 MHz
G
ps
(dB)
24.3
24.4
24.2
D
(%)
20.2
19.9
19.4
Output PAR
(dB)
9.9
9.9
9.8
ACPR
(dBc)
--45.6
--45.9
--46.2
IRL
(dB)
--19
--17
--13
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Universal Broadband Driver
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel.
1. All data measured in fixture with device soldered to heat sink.
Freescale Semiconductor, Inc., 2013–2014. All rights reserved.
AFT27S006NT1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
--40 to +150
--40 to +225
Unit
Vdc
Vdc
Vdc
C
C
C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 78C, 0.76 W CW, 28 Vdc, I
DQ
= 70 mA, 2140 MHz
Symbol
R
JC
Value
(2,3)
3.4
Unit
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 7.7
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 70 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 6 Vdc, I
D
= 77 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
0.8
1.5
0.1
1.2
1.8
0.2
1.6
2.3
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
(continued)
AFT27S006NT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 70 mA, P
out
= 28.8 dBm Avg., f = 2170 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
VSWR 5:1 at 32 Vdc, 8.1 W CW Output Power
(3 dB Input Overdrive from 6 W CW Rated Power)
G
ps
D
ACPR
IRL
21.0
17.0
—
—
22.0
20.0
--44.0
--16
24.5
—
--38.5
--10
dB
%
dBc
dB
Load Mismatch
(In Freescale Test Fixture, 50 ohm system) I
DQ
= 70 mA, f = 2140 MHz
No Device Degradation
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 70 mA, 2110--2170 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110--2170 MHz frequency range.)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 28.8 dBm Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
P1dB
—
—
6
--10.2
—
—
W
VBW
res
G
F
G
P1dB
—
—
—
—
80
0.053
0.012
0.004
—
—
—
—
MHz
dB
dB/C
dB/C
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
3
V
GG
C7
C6
C13
C12
C8
C1*
C2
R1
Q1
C3
C9
C10
D51056
C11
V
DD
C5*
C4
AFT27S006N
Rev. 2
2100MHz
V
DD
*C1 and C5 are mounted vertically.
NOTE: All data measured in fixture with device soldered to heat sink.
Figure 2. AFT27S006NT1 Test Circuit Component Layout — 2110-
-2170 MHz
Table 6. AFT27S006NT1 Test Circuit Component Designations and Values — 2110-
-2170 MHz
Part
C1, C5, C6, C8, C9
C2
C3
C4
C7, C10, C11, C12, C13
Q1
R1
PCB
Description
9.1 pF Chip Capacitors
1.2 pF Chip Capacitor
2.7 pF Chip Capacitor
1.5 pF Chip Capacitor
10
F
Chip Capacitors
RF Power LDMOS Transistor
4.75
,
1/4 W Chip Resistor
Rogers RO4350B, 0.020,
r
= 3.66
Part Number
ATC100B39R1JT500XT
ATC100B1R2JT500XT
ATC100B2R7JT500XT
ATC100B1R5JT500XT
GRM32ER61H106KA12L
AFT27S006NT1
CRCW12064R75FNEA
D51056
Manufacturer
ATC
ATC
ATC
ATC
Murata
Freescale
Vishay
MTL
AFT27S006NT1
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
—
2110-
-2170 MHz
D
, DRAIN
EFFICIENCY (%)
26
25
24
G
ps
, POWER GAIN (dB)
23
22
21
20
19
18
17
16
2060
2080
2100
2120
2140
2160
ACPR
2180
2200
G
ps
IRL
D
V
DD
= 28 Vdc, P
out
= 28.8 dBm (Avg.)
I
DQ
= 70 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
22
20
18
16
14
--37
--39
PARC
--41
--43
--45
--47
2240
ACPR (dBc)
--6
--10
--14
--18
--22
--26
IRL, INPUT RETURN LOSS (dB)
--0.2
--0.4
--0.6
--0.8
--1
--1.2
PARC (dB)
f, FREQUENCY (MHz)
Figure 3. Single-
-Carrier Output Peak- -Average Ratio Compression
-to-
(PARC) Broadband Performance @ P
out
= 28.8 dBm Avg.
--20
--30
--40
--50
IM5--L
IM5--U
IM7--L
IM7--U
--60
V
DD
= 28 Vdc, P
out
= 5.6 W (PEP), I
DQ
= 70 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 2140 MHz
--70
10
1
TWO--TONE SPACING (MHz)
IM3--U
IM3--L
IMD, INTERMODULATION DISTORTION (dBc)
100
200
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
24
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
23.5
G
ps
, POWER GAIN (dB)
23
22.5
22
21.5
21
2
1
0
--1
--1 dB = 0.45 W
--2
--3
--4
ACPR
15
PARC
0
0.5
1
1.5
2
2.5
P
out
, OUTPUT POWER (WATTS)
10
--3 dB = 1.55 W
40
D
35
30
G
ps
25
20
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
--2 dB = 1.1 W
Figure 5. Output Peak- -Average Ratio Compression
-to-
(PARC) versus Output Power
D
DRAIN EFFICIENCY (%)
V
DD
= 28 Vdc, I
DQ
= 70 mA, f = 2140 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
AFT27S006NT1
RF Device Data
Freescale Semiconductor, Inc.
5
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