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HN7G04FU

Description
general-purpose amplifier applications
CategoryDiscrete semiconductor    The transistor   
File Size435KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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HN7G04FU Overview

general-purpose amplifier applications

HN7G04FU Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction2-2J1A, US6, 6 PIN
Contacts6
Reach Compliance Codeunknow
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 0.213
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
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