MSICSN10060CCE3 datasheet, PDF

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MSICSN10060CCE3: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, TO-257, 3 PIN; CategoryDiscrete semiconductor diode; File Size170KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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MSICSN10060CCE3 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, TO-257, 3 PIN

MSICSN10060CCE3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
package instruction	TO-257, 3 PIN
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
application	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON CARBIDE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.8 V
JEDEC-95 code	TO-257AA
JESD-30 code	R-MSFM-P3
Maximum non-repetitive peak forward current	50 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	10 A
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	50 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	PIN/PEG
Terminal location	SINGLE
Base Number Matches	1

MSICSN10060CCE3 Related Products

	MSICSN10060CCE3	MSICSN10060CAE3	MSICSN10060DE3
Description	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, TO-257, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, TO-257, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, TO-257, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to
Maker	Microsemi	Microsemi	Microsemi
package instruction	TO-257, 3 PIN	TO-257, 3 PIN	R-MSFM-P3
Reach Compliance Code	compli	compli	compliant
ECCN code	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	EFFICIENCY	EFFICIENCY	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials	SILICON CARBIDE	SILICON CARBIDE	SILICON CARBIDE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.8 V	1.8 V	1.8 V
JEDEC-95 code	TO-257AA	TO-257AA	TO-257AA
JESD-30 code	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
Maximum non-repetitive peak forward current	50 A	50 A	50 A
Number of components	2	2	2
Phase	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C
Maximum output current	10 A	10 A	10 A
Package body material	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	600 V	600 V	600 V
Maximum reverse current	50 µA	50 µA	50 µA
surface mount	NO	NO	NO
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
Base Number Matches	1	1	-

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