Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, TO-257, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Microsemi |
package instruction | R-MSFM-P3 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Other features | HIGH RELIABILITY |
application | EFFICIENCY |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
Diode component materials | SILICON CARBIDE |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.8 V |
JEDEC-95 code | TO-257AA |
JESD-30 code | R-MSFM-P3 |
Maximum non-repetitive peak forward current | 50 A |
Number of components | 2 |
Phase | 1 |
Number of terminals | 3 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 10 A |
Package body material | METAL |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Maximum repetitive peak reverse voltage | 600 V |
Maximum reverse current | 50 µA |
surface mount | NO |
technology | SCHOTTKY |
Terminal form | PIN/PEG |
Terminal location | SINGLE |
MSICSN10060DE3 | MSICSN10060CCE3 | MSICSN10060CAE3 | |
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Description | Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, TO-257, 3 PIN | Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, TO-257, 3 PIN | Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon Carbide, TO-257AA, TO-257, 3 PIN |
Is it Rohs certified? | conform to | conform to | conform to |
Maker | Microsemi | Microsemi | Microsemi |
package instruction | R-MSFM-P3 | TO-257, 3 PIN | TO-257, 3 PIN |
Reach Compliance Code | compliant | compli | compli |
ECCN code | EAR99 | EAR99 | EAR99 |
Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
application | EFFICIENCY | EFFICIENCY | EFFICIENCY |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | COMMON CATHODE, 2 ELEMENTS | COMMON ANODE, 2 ELEMENTS |
Diode component materials | SILICON CARBIDE | SILICON CARBIDE | SILICON CARBIDE |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.8 V | 1.8 V | 1.8 V |
JEDEC-95 code | TO-257AA | TO-257AA | TO-257AA |
JESD-30 code | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 |
Maximum non-repetitive peak forward current | 50 A | 50 A | 50 A |
Number of components | 2 | 2 | 2 |
Phase | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 |
Maximum operating temperature | 175 °C | 175 °C | 175 °C |
Minimum operating temperature | -65 °C | -65 °C | -65 °C |
Maximum output current | 10 A | 10 A | 10 A |
Package body material | METAL | METAL | METAL |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Maximum repetitive peak reverse voltage | 600 V | 600 V | 600 V |
Maximum reverse current | 50 µA | 50 µA | 50 µA |
surface mount | NO | NO | NO |
technology | SCHOTTKY | SCHOTTKY | SCHOTTKY |
Terminal form | PIN/PEG | PIN/PEG | PIN/PEG |
Terminal location | SINGLE | SINGLE | SINGLE |
Base Number Matches | - | 1 | 1 |