RU30J30M
Dual N-Channel Advanced Power MOSFET
Features
• 30V/30A,
R
DS (ON)
=7mΩ(Typ.)@V
GS
=10V
R
DS (ON)
=9.5mΩ(Typ.)@V
GS
=4.5V
G2
S2
Pin Description
S2 S2
• Fast Switching Speed
• Low gate Charge
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
G1
D1
D1
D1
PIN1
PDFN5*6
Applications
• Switching Application Systems
• DC/DC Converters
Dual N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
30
±20
150
-55 to 150
20
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
①
300μs Pulse Drain Current Tested
Continuous Drain Current@T
C
(V
GS
=4.5V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
120
30
19
10
8
29
12
3.1
2
A
I
D
②
A
Continuous Drain Current@T
A
(V
GS
=4.5V)
Maximum Power Dissipation@T
C
P
D
Maximum Power Dissipation@T
A
③
③
W
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2017
1
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RU30J30M
Symbol
R
JC
R
JA
③
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Rating
4.2
40
Unit
°C/W
°C/W
Drain-Source Avalanche Ratings
E
AS
④
Avalanche Energy, Single Pulsed
49
mJ
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
⑤
Parameter
Test Condition
RU30J30M
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=250µA
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
DS
=30V, V
GS
=0V
T
J
=125°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=20A
V
GS
=4.5V, I
DS
=16A
30
1
30
1.2
2.5
±100
7
9.5
9
12
V
µA
V
nA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
⑤
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑥
I
SD
=20A, V
GS
=0V
I
SD
=20A, dl
SD
/dt=100A/µs
15
8
1.2
V
ns
nC
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑥
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
1
670
180
75
5
Ω
pF
V
DD
=15V, R
L
=0.75Ω,
I
DS
=20A, V
GEN
=10V,
R
G
=3Ω
10
15
4
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=24V, V
GS
=10V,
I
DS
=20A
12
3
4
nC
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2017
2
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RU30J30M
Notes:
①Pulse
width limited by safe operating area.
②Calculated
continuous current based on maximum allowable junction temperature.
③When
mounted on 1 inch square copper board, t≤10sec.
④Limited
by T
Jmax
, I
AS
=14A, V
DD
= 24V, R
G
= 50Ω, Starting T
J
= 25°C.
⑤Pulse
test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed
by design, not subject to production testing.
Ordering and Marking Information
Device
RU30J30M
Marking
RU30J30M
Package
PDFN5060
Packaging Quantity Reel Size Tape width
Tape&Reel
3000
13''
12mm
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2017
3
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RU30J30M
Typical Characteristics
35
30
Power Dissipation
30
25
20
15
10
5
0
Drain Current
25
20
15
10
5
0
0
25
50
75
100
125
150
I
D
- Drain Current (A)
P
D
- Power (W)
VGS=10V
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
R
DS(ON)
- On - Resistance (mΩ)
T
J
- Junction Temperature (°C)
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
1000
100
10
1
0.1
0.01
0.01
Safe Operation Area
R
DS(ON)
limited
Drain Current
Ids=20A
I
D
- Drain Current (A)
DC
10µs
100µs
1ms
10ms
T
C
=25°C
0.1
1
10
100
1000
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
Thermal Transient Impedance
ZthJC - Thermal Response (°C/W)
100
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
10
1
0.1
Single Pulse
R
θJC
=
4.2°C/W
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2017
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RU30J30M
Typical Characteristics
120
Output Characteristics
R
DS(ON)
- On Resistance (mΩ)
10V
6V
30
25
20
15
Drain-Source On Resistance
I
D
- Drain Current (A)
90
5V
60
3V
30
4.5V
10
5
0
0
10
20
30
40
50
60
2V
10V
0
0
1
2
3
4
5
V
DS
- Drain-Source Voltage (V)
2.5
I
D
- Drain Current (A)
100
Drain-Source On Resistance
V
GS
=10V
I
D
=20A
Source-Drain Diode Forward
Normalized On Resistance
I
S
- Source Current (A)
2.0
10
1.5
1.0
T
J
=150°C
1
T
J
=25°C
0.5
T
J
=25°C
Rds(on)=7mΩ
-50
-25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (°C)
V
SD
- Source-Drain Voltage (V)
Capacitance
V
GS
- Gate-Source Voltage (V)
1000
10
9
8
7
6
5
4
3
2
1
0
0
3
Gate Charge
VDS=24V
IDS=20A
C - Capacitance (pF)
Frequency=1.0MHz
800
Ciss
600
400
200
Coss
Crss
1
10
100
0
V
DS
- Drain-Source Voltage (V)
6
9
12
Q
G
- Gate Charge (nC)
Shenzhen City Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2017
5
www.ruichips.com
Discrete Device
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