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1N4725E3

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size94KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

1N4725E3 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

1N4725E3 Parametric

Parameter NameAttribute value
package instructionHERMETIC SEALED PACKAGE-2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
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