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JANTXV1N6621US

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size350KB,5 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric View All

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JANTXV1N6621US Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon,

JANTXV1N6621US Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Reach Compliance Codecompliant
ECCN codeEAR99
applicationULTRA FAST RECOVERY POWER
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.6 V
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak forward current20 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusQualified
GuidelineMIL-19500/585E
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.03 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5089, REV. A.2
1N6620/U/US thru 1N6625/U/US
Standard
ULTRAFAST RECOVERY RECTIFIER
Ultrafast Recovery Rectifier
Qualified per MIL-PRF-19500/585
Hermetic, non-cavity glass package
Metallurgically bonded
o
o
Operating and storage temperature: -65 C to +175
All parts are 100% hot solder dipped
JAN/ JANTX/ JANTXV available per MIL-PRF-19500/585
“JANS Plus” removes atypical/out of family V
F
A
V AI L AB L E AS
1 N , J AN , J AN T X , J ANT XV
JANS
JAN EQUIVALENT *
SJ*, SX*, SV*, SS*
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
Rating
WORKING PEAK REVERSE VOLTAGE
1N6620, U, US
1N6621, U ,US
1N6622, U, US
1N6623, U, US
1N6624 ,U, US
1N6625, U, US
AVERAGE RECTIFIED FORWARD CURRENT
1N6620, U, US thru 1N6622, U, US
1N6623, U, US thru 1N6625, U, US
PEAK FORWARD SURGE CURRENT
1N6620, U, US thru 1N6624,U, US
1N6625, U, US
MAXIMUM REVERSE CURRENT
1N6620, U, US thru 1N6624,U, US
1N6625, U, US
MAXIMUM REVERSE CURRENT
1N6620, U, US thru 1N6624,U, US
1N6625, U, US
MAX. PEAK FORWARD VOLTAGE (PULSED)
1N6620, U, US thru 1N6622,U, US
1N6623,U, US & 1N6624,U, US
1N6625, U, US
PEAK RECOVERY CURRENT
1N6620, U, US thru 1N6622,U, US
1N6623,U, US & 1N6624,U, US
1N6625, U, US
MAXIMUM REVERSE RECOVERY TIME
1N6620, U, US thru 1N6622,U, US
1N6623,U, US & 1N6624,U, US
1N6625, U, US
FORWARD RECOVERY VOLTAGE
1N6620, U, US thru 1N6622,U, US
1N6623,U, US & 1N6624,U, US
1N6625, U, US
THERMAL RESISTANCE (Axial)
1N6620 thru 1N6625
THERMAL RESISTANCE (MELF)
1N6620U,US thru 1N6625U,US
All ratings are at T
A
= 25 C unless otherwise
specified.
Symbol
Condition
Max
200
400
600
800
900
1000
1.2
1.0
T
p
=8.3ms
o
o
Units
V
RWM
Volts
I
o
Amps
I
FSM
20
15
0.5
1.0
150
200
1.60
1.80
1.95
3.5
4.2
5.0
30
50
60
12
18
30
38
A(pk)
Amps
Amps
I
R
@ V
RWM
T
j
= 25 C
o
I
R
@ V
RWM
T
j
= 150 C
V
FM
I
F
=2.0A
I
F
=1.5A
I
F
=1.5A
I
F
=2A,
100A/
Volts
I
RM
A(pk)
T
rr
I
F
=0.5A
I
RM
=1.0A
ns
V
FRM
I
F
=0.5A
t
r
=12ns
L=.375
L=0
Volts
o
R
JL
R
JEC
C/W
C/W
o
13
*
Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting
from wafer fabrication through assembly and testing using our specification 7700-4093.
©2012 Sensitron Semiconductor
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
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