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SMSG51A

Description
Trans Voltage Suppressor Diode, 600W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size263KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

SMSG51A Overview

Trans Voltage Suppressor Diode, 600W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2

SMSG51A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1167269949
package instructionR-PDSO-J2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum breakdown voltage62.7 V
Minimum breakdown voltage56.7 V
Breakdown voltage nominal value57 V
Maximum clamping voltage82.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-J2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage51 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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