TH58100FT datasheet, PDF - EEWORLD Datasheet

TH58100FT: DescriptionTENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS; Categorystorage storage; File Size428KB，43 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TH58100FT Overview

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	TSOP1
package instruction	TSOP1, TSSOP48,.8,20
Contacts	48
Reach Compliance Code	unknow
ECCN code	3A991.B.1.B.1
Maximum access time	35 ns
command user interface	YES
Data polling	NO
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	1073741824 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of departments/size	8K
Number of terminals	48
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
page size	512 words
Parallel/Serial	SERIAL
power supply	3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	16K
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
switch bit	NO
type	NAND TYPE
width	12 mm

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