ALD110908ASAL datasheet, PDF - EEWORLD Datasheet

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ALD110908ASAL: Descriptionmosfet dual epad(R) N-Ch; Categorysemiconductor Discrete semiconductor; File Size101KB，11 Pages; ManufacturerAll Sensors; Environmental Compliance

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ALD110908ASAL Overview

mosfet dual epad(R) N-Ch

ALD110908ASAL Parametric

Parameter Name	Attribute value
Manufacture	Advanced Linear Devices
Product Category	MOSFET
RoHS	Yes
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	10 V
Vgs - Gate-Source Breakdown Voltage	10.6 V
Id - Continuous Drain Curre	12 mA
Rds On - Drain-Source Resistance	500 Ohms
Configurati	Dual
Maximum Operating Temperature	+ 70 C
Pd - Power Dissipati	500 mW
Mounting Style	SMD/SMT
Package / Case	SOIC-8
Channel Mode	Depleti
Forward Transconductance - Mi	0.0014 S
Minimum Operating Temperature	0 C
Factory Pack Quantity	50
Typical Turn-Off Delay Time	10 ns

ALD110908ASAL Related Products

	ALD110908ASAL	ALD110908PAL	ALD110908SAL	ALD110908APAL	ALD110808SCL	ALD110808PCL	ALD110808APCL	ALD110808ASCL
Description	mosfet dual epad(R) N-Ch	mosfet dual epad(R) N-Ch	mosfet dual epad(R) N-Ch	mosfet dual epad(R) N-Ch	mosfet quad epad(R) N-Ch	mosfet quad epad(R) N-Ch	mosfet quad epad(R) N-Ch	mosfet quad epad(R) N-Ch
Manufacture	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices	Advanced Linear Devices
Product Category	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET	MOSFET
RoHS	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Transistor Polarity	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	10 V	10 V	10 V	10 V	10 V	10 V	10 V	10 V
Vgs - Gate-Source Breakdown Voltage	10.6 V	10.6 V	10.6 V	10.6 V	10.6 V	10.6 V	10.6 V	10.6 V
Id - Continuous Drain Curre	12 mA	12 mA	12 mA	12 mA	12 mA	12 mA	12 mA	12 mA
Rds On - Drain-Source Resistance	500 Ohms	500 Ohms	500 Ohms	500 Ohms	500 Ohms	500 Ohms	500 Ohms	500 Ohms
Configurati	Dual	Dual	Dual	Dual	Quad	Quad	Quad	Quad
Maximum Operating Temperature	+ 70 C	+ 70 C	+ 70 C	+ 70 C	+ 70 C	+ 70 C	+ 70 C	+ 70 C
Pd - Power Dissipati	500 mW	500 mW	500 mW	500 mW	500 mW	500 mW	500 mW	500 mW
Mounting Style	SMD/SMT	Through Hole	SMD/SMT	Through Hole	SMD/SMT	Through Hole	Through Hole	SMD/SMT
Package / Case	SOIC-8	PDIP-8	SOIC-8	PDIP-8	SOIC-16	PDIP-16	PDIP-16	SOIC-16
Channel Mode	Depleti	Depleti	Depleti	Depleti	Depleti	Depleti	Depleti	Depleti
Forward Transconductance - Mi	0.0014 S	0.0014 S	0.0014 S	0.0014 S	0.0014 S	0.0014 S	0.0014 S	0.0014 S
Minimum Operating Temperature	0 C	0 C	0 C	0 C	0 C	0 C	0 C	0 C
Factory Pack Quantity	50	50	50	50	48	25	25	48
Typical Turn-Off Delay Time	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns	10 ns

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