SS10P3C, SS10P4C
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP
®
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Available
1
2
SMPC
(TO-277A)
K
Cathode
Anode 1
Anode 2
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling
diodes, DC/DC converters, and polarity protection
application.
2 x 5.0 A
30 V, 40 V
200 A
20 mJ
0.37 V
150 °C
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 5 A
T
J
max.
Package
Circuit configuration
MECHANICAL DATA
Case:
SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
SMPC (TO-277A)
Single
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at 25 °C, I
AS
= 2 A per diode
Operating junction and storage temperature range
total device
per diode
V
RRM
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
SYMBOL
SS10P3C
S103C
30
10
5.0
200
20
-55 to +150
A
mJ
°C
SS10P4C
S104C
40
V
A
UNIT
Revision: 22-Mar-18
Document Number: 89035
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS10P3C, SS10P4C
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 2.5 A
I
F
= 5.0 A
I
F
= 2.5 A
I
F
= 5.0 A
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
C
J
SYMBOL
TYP.
0.40
0.45
0.29
0.37
56
28
430
MAX.
-
0.53
-
0.44
550
45
-
μA
mA
pF
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
per diode
Reverse current per diode
Typical junction capacitance per diode
Rated V
R
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise specified)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JA
R
JL
(1)
SS10P3C
60
3
SS10P4C
UNIT
°C/W
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION
(Example)
PREFERRED P/N
SS10P4C-M3/86A
SS10P4C-M3/87A
SS10P4CHM3_A/H
(1)
SS10P4CHM3_A/I
(1)
(1)
UNIT WEIGHT (g)
0.10
0.10
0.10
0.10
PACKAGE CODE
86A
87A
H
I
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Revision: 22-Mar-18
Document Number: 89035
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS10P3C, SS10P4C
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C
unless otherwise noted)
12
Resistive or Inductive Load
1000
Instantaneous Reverse Current (mA)
Average Forward Current (A)
10
100
10
T
A
= 150 °C
8
T
A
= 125 °C
1
6
4
T
L
measured
at the Cathode Band Terminal
0.1
T
A
= 25 °C
0.01
2
0
0
25
50
75
100
125
150
175
0.001
10
20
30
40
50
60
70
80
90
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
2.5
D = 0.3
D = 0.2
2.0
D = 0.1
D = 1.0
1.5
D = 0.5 D = 0.8
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Junction Capacitance (pF)
Average Power Loss (W)
1000
1.0
T
0.5
D = t
p
/T
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
t
p
100
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
T
A
= 150 °C
10
T
A
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
1
T
A
= 25 °C
10
0.1
Junction to Ambient
1
0.01
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 22-Mar-18
Document Number: 89035
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS10P3C, SS10P4C
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMPC
(TO-277A)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
Vishay General Semiconductor
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.268
(6.80)
0.186 (4.72)
MIN.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
Conform to JEDEC
®
TO-277A
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
Revision: 22-Mar-18
Document Number: 89035
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 08-Feb-17
1
Document Number: 91000
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