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IXA30PG1200DHGLB-TRR

Description
igbt modules xpt igbt phaseleg isoplus
Categorysemiconductor    Discrete semiconductor   
File Size159KB,5 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Environmental Compliance  
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igbt modules xpt igbt phaseleg isoplus

IXA30PG1200DHGLB-TRR Parametric

Parameter NameAttribute value
ManufactureIXYS
Product CategoryIGBT Modules
PackagingReel
Factory Pack Quantity200
Advanced Technical Information
IXA 30PG1200DHGLB
I
C25
= 43 A
= 1200 V
V
CES
V
CE(sat) typ
= 1.9 V
XPT IGBT phaseleg
ISOPLUS™
Surface Mount Power Device
7
D3
6
4
5
1
D4
S1
D1
7
9
D2
8
9
1
3 2
Iso
3
2
S2
la
to ted
he su
at rfa
sin ce
k
4
6 5
E72873
8
IGBTs S1, S2
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= 15 V; R
G
= 39
W;
T
VJ
= 125°C
RBSOA, clamped inductive load; L = 100 µH
V
CE
= 900 V; V
GE
= ±15 V; R
G
= 39
W;
T
VJ
= 125°C
none repetitive
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
±20
43
30
75
V
CES
10
150
V
V
A
A
A
µs
W
Features
• XPT IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• Sonic
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• V
CEsat
detection diode
- integrated into package
- very fast diode
• Package
- isolated back surface
- low coupling capacity between pins
and heatsink
- PCB space saving
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
Applications
• Phaseleg
- buck-boost chopper
• Full bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• Three phase bridge
- AC drives
- controlled rectifier
Characteristic
Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
1.9
2.2
5.4
T
VJ
= 25°C
T
VJ
= 125°C
200
500
70
40
250
100
2.5
3.0
tbd
tbd
76
0.95
0.85
1.3
max.
2.2
6.5
2.1
V
V
V
mA
µA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
(rec)off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 25 A; V
GE
= 15 V;
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V;
V
CE
= 0 V
;
V
GE
= ± 20 V
T
VJ
= 25°C
T
VJ
= 125°C
Inductive load; T
VJ
= 125°C
V
CE
= 600 V; I
C
= 25 A
V
GE
= ±15 V; R
G
= 39
W
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 25 A
with heatsink compound
(IXYS test setup)
IXYS reserves the right to change limits, test conditions and dimensions.
20120131b
© 2012 IXYS All rights reserved
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