PRELIMINARY
SFF9130-28D
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES:
• Rugged construction with poly silicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input transfer capacitance for easy paralleling
• Hermetically sealed surface mount package
• TX, TXV and Space Level screening available
• Replaces: 2x IRF9130 Types
MAXIMUM RATINGS
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Operating and Storage Temperature
Thermal Resistance, Junction to Case
(Both)
Total Device Dissipation
T
C
= 25
o
C
T
C
= 55
o
C
T
C
= 25
o
C
T
C
= 100
o
C
-11 AMP
-100 VOLTS
0.30S
DUAL UNCOMMITED
P-CHANNEL POWER MOSFET
28 PIN CLCC
SYMBOL
V
DS
V
GS
I
D
T
op
& T
stg
R
2JC
P
D
E
AS
E
AR
VALUE
-100
±20
-11
-7
-55 to +150
3.5
36
37
84
7.5
UNIT
Volts
Volts
Amps
o
C
o
C/W
Watts
mJ
mJ
Single Pulse Avalange Energy
Repetitive Avalange Energy
PACKAGE OUTLINE: 28 PIN CLCC
PIN OUT:
SOURCE (1): 16 - 21
DRAIN (1): 24 - 28
GATE (1):
22
SOURCE (2): 9 - 14
DRAIN (2): 2 - 6
GATE (2):
8
NOTE:
All drain/source pins must be connected on
the PC board in order to maximize current
carrying capability and to minimize RDS (on)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0035D
PRELIMINARY
SFF9130-28D
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS @ T
J
=25
o
C
(Unless Otherwise Specified)
RATING
Drain to Source Breakdown Voltage
(VGS =0 V, ID =1mA)
Temperature Coefficient of Breakdown Voltage
Drain to Source ON State Resistance
1/
(VGS = -10 V)
Gate Threshold Voltage
(VDS =VGS, ID =250:A)
Forward Transconductance
(VDS > ID(on) x RDS (on) Max, IDS = 7A)
Zero Gate Voltage Drain Current
(VDS = 80% rated VDS, VGS =0 V, T
A
= 25
o
C )
(VDS = 80% rated VDS, VGS =0 V, T
A
= 125
o
C )
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off DELAY Time
Fall Time
Diode Forward Voltage
(I
S
= rated I
D
, V
GS
= 0V, T
J
= 25
o
C)
Diode Reverse Recovery Time
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
At rated VGS
VGS = -10 Volts
50% rated VDS
ID = -11A
VDD = 50% of
rated VDS
ID = 11A
RG = 7.5S
I
D
= 7A
I
D
= 11A
SYMBOL
MIN
TYP
MAX
UNIT
BV
DSS
)BV
DSS
)T
J
R
DS(on)
V
GS(th)
gf
s
-100
-
-
-
-2.0
3.0
-
-
-
-
15
1
2
-
-
-
-
-
-
-
-
-
-
-
0.87
-
-
-
5.0
-
-
-
-
26
3
14
15
10
30
12
-
125
-
860
350
125
-
-
0.30
0.35
-4.0
-
-25
250
-100
100
29
7.1
21
60
140
140
140
-4.7
250
3
-
-
-
V
V
S
V
S(É)
I
DSS
I
GSS
Qg
Qgs
Qgd
t
d (on)
tr
t
d (off)
tf
V
SD
:A
nA
nC
nsec
V
nsec
:C
pF
TJ = 25
o
C
IF = 10A
di/dt = 100A/:sec
VGS = 0 Volts
VDS = -25 Volts
f = 1 MHz
t
rr
Q
RR
Ciss
Coss
Crss
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ All package pins of the same terminations (Drain/Source/Gate) must be connected together to minimize
R
DS(on)
and maximize current carrying capability.
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