UTT50N06L-TN3-T datasheet, PDF

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UTT50N06L-TN3-T: Description50A, 60V N-CHANNEL POWER MOSFET; CategoryDiscrete semiconductor The transistor; File Size372KB，8 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/; Environmental Compliance

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UTT50N06L-TN3-T Overview

50A, 60V N-CHANNEL POWER MOSFET

UTT50N06L-TN3-T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	120 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	50 A
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.02 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	100 pF
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	114 W
Maximum pulsed drain current (IDM)	200 A
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	340 ns
Maximum opening time (tons)	260 ns
Base Number Matches	1

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UNISONIC TECHNOLOGIES CO., LTD

UTT50N06

50A, 60V N-CHANNEL

POWER MOSFET



DESCRIPTION

Power MOSFET

The UTC

UTT50N06

is an N-channel power MOSFET using

UTC’s advanced technology to provide customers with a

minimum on-state resistance and superior switching performance.

The UTC

UTT50N06

is generally applied in low power

switching mode power appliances and electronic ballast.



FEATURES

* R

DS(ON)

=16mΩ @ V

=10V, I

= 50A

* Low Gate Charge (Typical 30nC)

* High Switching Speed

* Improved dv/dt capability



SYMBOL



ORDERING INFORMATION

Package

TO-220

TO-252

Pin Assignment

Packing

Tube

Tape Reel

Ordering Number

Lead Free

Halogen Free

UTT50N06L-TA3-T

UTT50N06G-TA3-T

UTT50N06L-TN3-T

UTT50N06G-TN3-T

UTT50N06L-TN3-R

UTT50N06G-TN3-R

Note: Pin Assignment: G: Gate D: Drain

S: Source

www.unisonic.com.tw

1 of 8

QW-R502-704.C

UTT50N06L-TN3-T Related Products

	UTT50N06L-TN3-T	UTT50N06L-TA3-T	UTT50N06L-TN3-R	UTT50N06G-TN3-R	UTT50N06G-TA3-T	UTT50N06G-TN3-T
Description	50A, 60V N-CHANNEL POWER MOSFET	50A, 60V N-CHANNEL POWER MOSFET	50A, 60V N-CHANNEL POWER MOSFET	50A, 60V N-CHANNEL POWER MOSFET	50A, 60V N-CHANNEL POWER MOSFET	50A, 60V N-CHANNEL POWER MOSFET
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant	compli	compli	compliant	compli	compli
Avalanche Energy Efficiency Rating (Eas)	120 mJ	480 mJ	120 mJ	120 mJ	480 mJ	120 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	50 A	50 A	50 A	50 A	50 A	50 A
Maximum drain current (ID)	50 A	50 A	50 A	50 A	50 A	50 A
Maximum drain-source on-resistance	0.02 Ω	0.02 Ω	0.02 Ω	0.02 Ω	0.02 Ω	0.02 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	100 pF	100 pF	100 pF	100 pF	100 pF	100 pF
JEDEC-95 code	TO-252	TO-220AB	TO-252	TO-252	TO-220AB	TO-252
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2
Number of components	1	1	1	1	1	1
Number of terminals	2	3	2	2	3	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	114 W	100 W	114 W	114 W	100 W	114 W
Maximum pulsed drain current (IDM)	200 A	200 A	200 A	200 A	200 A	200 A
surface mount	YES	NO	YES	YES	NO	YES
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	340 ns	340 ns	340 ns	340 ns	340 ns	340 ns
Maximum opening time (tons)	260 ns	260 ns	260 ns	260 ns	260 ns	260 ns
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Base Number Matches	1	1	-	1	1	-
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

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