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GBU810

Description
8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size144KB,2 Pages
ManufacturerNanjing International Group Co.,Ltd
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GBU810 Overview

8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

8 A, 1000 V, 硅, 桥式整流二极管

GBU810 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage1000 V
Maximum average input current8 A
Processing package descriptionROHS COMPLIANT, PLASTIC, GBU, 4 PIN
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Shell connectionisolation
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage1000 V
Maximum non-repetitive peak forward current200 A
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