GBU810 datasheet, PDF - EEWORLD Datasheet

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GBU810: Description8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size144KB，2 Pages; ManufacturerNanjing International Group Co.,Ltd

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GBU810 Overview

8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

8 A, 1000 V, 硅, 桥式整流二极管

GBU810 Parametric

Parameter Name	Attribute value
Number of terminals	4
Number of components	4
Minimum breakdown voltage	1000 V
Maximum average input current	8 A
Processing package description	ROHS COMPLIANT, PLASTIC, GBU, 4 PIN
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	MATTE Tin
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Bridge, 4 ELEMENTS
Shell connection	isolation
Diode component materials	silicon
Diode type	bridge rectifier diode
Phase	1
Maximum repetitive peak reverse voltage	1000 V
Maximum non-repetitive peak forward current	200 A

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GBU8005

THRU

GBU810

SINGLE PHASE 8.0 AMP BRIDGE RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

FEATURES

* Ideal for printed circuit board

* Low forward voltage

* Low leakage current

* Polarity: marked on body

* Mounting position: Any

* Both normal and Pb free product are available:

* Normal:80~95%Sn,5~20%Pb

* Pb free:99 Sn above can meet Rohs enviroment substance

directive request

.720(18.29)

.680(17.27)

.083(2.1)

.075(1.9)

.752(19.1)

.720(18.3)

.232(5.9)

.224(5.7)

(.874)22.2

(.860)21.8

.173(4.40)

.134(3.40)

8.0 Ampere

GBU

.210 .210 .210

.190 .190 .190

(5.33) (5.33) (5.33)

(4.83) (4.83) (4.83)

.022(.56)

.018(.46)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Tc=50 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per Bridge Element at 4.0A D.C.

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Operating Temperature Range, Tj

Storage Temperature Range, TSTG

Ta=100 C

GBU8005 GBU801

GBU802

GBU804

GBU806

GBU808

GBU810

UNITS

100

200

140

200

400

280

400

8.0

200

1.1

500

-50 +150

600

420

600

800

560

800

1000

700

1000

muA

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