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SB520

Description
5 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size34KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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SB520 Overview

5 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD

SB520 THRU SB560
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 60 Volts
Forward Current -
5.0 Amperes
FEATURES
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss,
high efficiency
High current capability,
low forward voltage drop
High surge capability
Guardring for overvoltage protection
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3 kg) tension
MECHANICAL DATA
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 ounce, 1.12 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
SB520
SB530
SB540
SB550
SB560
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length
(SEE FIG.1)
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method) at rated T
L
Maximum instantaneous forward voltage at 5.0A
(NOTE 1)
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
5.0
50
35
50
60
42
60
Volts
Volts
Volts
Amps
I
FSM
150.0
Amps
V
F
0.55
0.67
Volts
Maximum instantaneous reverse current at
rated DC blocking voltage
(NOTE 1)
T
A
=25°C
T
A
=100°C
Typical thermal resistance
(NOTE 2)
Operating junction temperature range
Storage temperature range
I
R
50.0
R
ΘJA
R
ΘJL
T
J
T
STG
-65 to +125
0.5
25.0
25.0
8.0
-65 to +150
-65 to +150
mA
°C/W
°C
°C
NOTES:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) Thermal resistance junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length
4/98

SB520 Related Products

SB520 SB560 SB550 SB540 SB530
Description 5 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD
state - ACTIVE TRANSFERRED ACTIVE DISCONTINUED
Diode type - RECTIFIER DIODE rectifier diode rectifier diode rectifier diode
Number of terminals - - 2 2 2
Number of components - - 1 1 1
packaging shape - - round round round
Package Size - - LONG FORM LONG FORM LONG FORM
Terminal form - - Wire Wire Wire
Terminal location - - AXIAL AXIAL AXIAL
Packaging Materials - - Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
Craftsmanship - - SCHOTTKY SCHOTTKY SCHOTTKY
structure - - single single single
Shell connection - - isolation isolation isolation
Diode component materials - - silicon silicon silicon
application - - EFFICIENCY GENERAL PURPOSE GENERAL PURPOSE
Phase - - 1 1 1
Maximum repetitive peak reverse voltage - - 50 V 40 V 30 V
Maximum average forward current - - 5 A 5 A 5 A
Maximum non-repetitive peak forward current - - 200 A 150 A 220 A

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