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SB550

Description
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size34KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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SB550 Overview

5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

SB550 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateTRANSFERRED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage50 V
Maximum average forward current5 A
Maximum non-repetitive peak forward current200 A
SB520 THRU SB560
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 60 Volts
Forward Current -
5.0 Amperes
FEATURES
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss,
high efficiency
High current capability,
low forward voltage drop
High surge capability
Guardring for overvoltage protection
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3 kg) tension
MECHANICAL DATA
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 ounce, 1.12 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
SB520
SB530
SB540
SB550
SB560
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length
(SEE FIG.1)
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method) at rated T
L
Maximum instantaneous forward voltage at 5.0A
(NOTE 1)
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
5.0
50
35
50
60
42
60
Volts
Volts
Volts
Amps
I
FSM
150.0
Amps
V
F
0.55
0.67
Volts
Maximum instantaneous reverse current at
rated DC blocking voltage
(NOTE 1)
T
A
=25°C
T
A
=100°C
Typical thermal resistance
(NOTE 2)
Operating junction temperature range
Storage temperature range
I
R
50.0
R
ΘJA
R
ΘJL
T
J
T
STG
-65 to +125
0.5
25.0
25.0
8.0
-65 to +150
-65 to +150
mA
°C/W
°C
°C
NOTES:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) Thermal resistance junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length
4/98

SB550 Related Products

SB550 SB560 SB540 SB530 SB520
Description 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 5 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD
Number of terminals 2 - 2 2 -
Number of components 1 - 1 1 -
state TRANSFERRED ACTIVE ACTIVE DISCONTINUED -
packaging shape round - round round -
Package Size LONG FORM - LONG FORM LONG FORM -
Terminal form Wire - Wire Wire -
Terminal location AXIAL - AXIAL AXIAL -
Packaging Materials Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy -
Craftsmanship SCHOTTKY - SCHOTTKY SCHOTTKY -
structure single - single single -
Shell connection isolation - isolation isolation -
Diode component materials silicon - silicon silicon -
Diode type rectifier diode RECTIFIER DIODE rectifier diode rectifier diode -
application EFFICIENCY - GENERAL PURPOSE GENERAL PURPOSE -
Phase 1 - 1 1 -
Maximum repetitive peak reverse voltage 50 V - 40 V 30 V -
Maximum average forward current 5 A - 5 A 5 A -
Maximum non-repetitive peak forward current 200 A - 150 A 220 A -

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