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ES1DW_R1_00001

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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ES1DW_R1_00001 Overview

Rectifier Diode,

ES1DW_R1_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED

ES1DW_R1_00001 Preview

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ES1AW SERIES
SURFACE MOUNT SUPERFAST RECTIFIER
1.0 Ampere
CURRENT
VOLTAGE
50 to 600 Volts
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Superfast recovery times for high efficiency
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA-481)
Weight: 0.0023 ounce, 0.0679 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PA RA ME TE R
Ma xi mum Re c urre nt P e a k Re ve r s e Vo lta g e
Ma xi mum R MS V o lta g e
Ma xi mum D C B lo c ki ng V o lta g e
Ma xi mum A ve ra g e F o rwa r d C urr e nt a t T
L
=1 0 5
O
C
P e a k F o r wa rd S ur g e C urr e nt : 8 . 3 ms s i ng le ha lf s i ne - wa ve
s up e r i mp o s e d o n r a te d l o a d ( J E D E C me tho d )
Ma xi mum F o r wa rd V o lta g e a t 1 .0 A
Ma xi mum D C Re ve rs e C ur re nt a t Ra te d D C
B lo c ki ng Vo lta g e
Ma xi mum R e ve rs e R e c o ve ry Ti me ( No te 1 )
Typ i c a l J unc ti o n C a p a c i ta nc e ( No te 2 )
Typ i c a l The rma l Re s i s ta nc e ( No te 3 )
Op e r a ti ng J unc ti o n a nd S to ra g e Te mp e r a ture Ra ng e
T
J
= 2 5
O
C
T
J
=1 0 0
O
C
S YMB OL E S 1 AW
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
t
rr
C
J
R
θJ
L
T
J
,T
S TG
0 .9 5
1 .0
10
35
7 .0
35
-5 5 to +1 5 0
O
E S 1 B W E S 1 C W E S 1 D W E S 1 E W E S 1 GW E S 1 J W UNITS
100
70
100
150
105
150
200
140
200
1 .0
30
1 .2 5
1.7
300
210
300
400
280
400
600
420
600
V
V
V
A
A
V
μA
ns
pF
C / W
O
50
35
50
C
NOTES:
1.Reverse Recovery Tset Conditions:I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1.0MHz and applied reverse voltage of 4.0 volts.
3.8.0mm
2
( .013mm thick ) land areas.
June 2,2011-REV.03
PAGE . 1
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