DATASHEET
Dual, Noninverting Power MOSFET Radiation Hardened
Drivers
HS-4424DRH, HS4424DEH
The radiation hardened HS-4424 family are noninverting, dual,
monolithic high-speed MOSFET drivers designed to convert low
voltage control input signals into higher voltage, high current
outputs. The
HS-4424DRH, HS-4424DEH
are fully tested
across the 8V to 18V operating range.
The inputs of these devices can be directly driven by the
HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS
type logic devices. The fast rise times and high current outputs
allow very quick control of high gate capacitance power
MOSFETs in high frequency applications.
The high current outputs minimize power losses in MOSFETs by
rapidly charging and discharging the gate capacitance. The
output stage incorporates a low voltage lockout circuit that
puts the outputs into a three-state mode when the supply
voltage is below its Undervoltage Lockout (UVLO) threshold
voltage.
Constructed with Intersil’s dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are immune
to single event latch-up and have been specifically designed to
provide highly reliable performance in harsh radiation
environments.
TABLE 1. HS4424 PRODUCT FAMILY SPECIFIC UVLO Vth
PART NUMBER
HS-4424RH
HS-4424EH
HS4424BRH
HS4424BEH
HS4424DRH
HS4424DEH
UVLO (V)
<10
<7.5
<8
Features
• Electrically screened to DLA SMD#
5962-99560
• QML qualified per MIL-PRF-38535 requirements
• Latch-up immune
• Radiation environment
• High dose rate (50-300rad(Si)/s). . . . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*
*Limit established by characterization
• I
PEAK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (minimum)
• Matched rise and fall times (C
L
= 4300pF). . 75ns (maximum)
• Low voltage lockout feature . . . . . . . . . . . . . . . . . . . . . . . . <8V
• Wide supply voltage range . . . . . . . . . . . . . . . . . . . . 8V to 18V
• Propagation delay . . . . . . . . . . . . . . . . . . . . 250ns (maximum)
• Consistent delay times with V
CC
changes
• Low power consumption
- 40mW with inputs high
- 20mW with inputs low
• Low equivalent input capacitance . . . . . . . . . . 3.2pF (typical)
• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4kV
Applications
• Switching power supplies
• DC/DC converters
• Motor controllers
7.7
UNDERVOLTAGE LOCKOUT (V)
+8V TO +18V
UVLO_f
UVLO_r
7.6
VCC
7.5
IN A
PWM
CONTROLLER
HS-1825ARH
IN B
OUT A
7.4
OUT B
7.3
HS-4424D
GND
7.2
-55
25
TEMPERATURE (°C)
125
FIGURE 1. TYPICAL APPLICATION
FIGURE 2. UNDERVOLTAGE LOCKOUT vs TEMPERATURE
October 15, 2015
FN8747.2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas LLC 2015. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HS-4424DRH, HS4424DEH
Pin Configuration
HS-4424DRH, HS-4424DEH
(16 LD FLATPACK)
TOP VIEW
NC
IN A
NC
GND A
GND B
NC
IN B
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
OUT A
OUT A
VCC
VCC
OUT B
OUT B
NC
Pin Descriptions
PIN NUMBER
1, 3, 6, 8, 9, 16
2
4
5
7
10, 11
12, 13
14, 15
PIN NAME
NC
IN A
GND A
GND B
IN B
OUT B
VCC
OUT A
EQUIVALENT ESD CIRCUIT
NA
Circuit 2
NA
NA
Circuit 2
NA
Circuit 1
NA
No Internal Connection
Driver A Input
Ground Reference A
Ground Reference B
Driver B Input
Driver B Output
Positive Power Supply
Driver A Output
DESCRIPTION
VCC
VCC
2kΩ
IN
GND
GND
FIGURE 3. CIRCUIT 1
FIGURE 4. CIRCUIT 2
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HS-4424DRH, HS4424DEH
Functional Block Diagram
VCC
VCC
IN A
IN A
LEVEL
Level Shifter
SHIFTER
CONTROL
LOGIC
Control Logic
&
AND
UVLO
UVLO
OUT
OUT A
A
OUT
OUT A
A
1k
1k
GND
A
GND
A
VCC
VCC
IN B
IN B
LEVEL
Level Shifter
SHIFTER
CONTROL
LOGIC
Control Logic
&
AND
UVLO
UVLO
OUT
OUT B
B
OUT
OUT B
B
1k
1k
GND
GND
B
FIGURE 5. BLOCK DIAGRAM
Ordering Information
SMD NUMBER
ORDERING
(Note
2)
5962F9956005V9A
HS0-4424DRH/SAMPLE
5962F9956005VXC
HS9-4424DRH/PROTO
5962F9956006V9A
5962F9956006VXC
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
“Ordering Information” table must be used when ordering.
PART NUMBER
(Note
1)
HS0-4424DRH-Q
HS0-4424DRH/SAMPLE
HS9-4424DRH-Q
HS9-4424DRH/PROTO
HS0-4424DEH-Q
HS9-4424DEH-Q
TEMPERATURE RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
DIE
DIE SAMPLE
16 Ld Flatpack
16 Ld Flatpack
DIE
16 Ld Flatpack
K16.A
K16.A
K16.A
PACKAGE
(RoHS Compliant)
PKG.
DWG. #
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HS-4424DRH, HS4424DEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3V to V
CC
Output Short-circuit Duration (1 output at a time). . . . . . . . . . . . Indefinite
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 5kV
Machine Model (Tested per MIL-PRF-883 3015.7) . . . . . . . . . . . . . 200V
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 750V
Thermal Information
Thermal Resistance (Typical)
JA
(°C/W)
JC
(°C/W)
16 Ld Flatpack Package (Notes
3, 4).
. . . .
34
5
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+175°C
Maximum Lead Temperature (Soldering 10 secs) . . . . . . . . . . . . . .+265°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V to 18V
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3.
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief
TB379
for details.
4. For
JC
, the “case temp” location is the center of the package underside.
Electrical Specifications
PARAMETER
V
SUPPLY
I
CCSB LOW
V
CC
= 8V, 12V, 18V, T
A
= +25°C, unless otherwise noted.
Boldface limits apply across the operating
MIN
(Note
5)
8
V
S
= 18V, Inputs = 0V
V
S
= 18V, Inputs = 0V
V
S
= 18V, Inputs = 0V, post radiation
MAX
(Note
5)
18
3.5
4
4
3.5
4
4
3.5
4
4
3.5
4
4
-5
-10
-10
-5
-10
-10
-5
-10
-10
-5
-10
-10
V
S
- 0.75
V
S
- 0.9
V
S
- 0.45
0.08
0.08
0.08
0.08
5
10
10
5
10
10
5
10
10
5
10
10
temperature range, -55°C to +125°C; over radiation total ionizing dose.
DESCRIPTION
Supply Voltage Range
18V Bias Current
TEST CONDITIONS
TYP
UNIT
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
I
CCSB HIGH
18V Bias Current
V
S
, Inputs = 18V
V
S
, Inputs = 18V
V
S
, Inputs = 18V, post radiation
I
CCSB LOW
8V Bias Current
V
S
= 8V, Inputs = 0V
V
S
= 8V, Inputs = 0V
V
S
= 8V, Inputs = 0V, post radiation
I
CCSB HIGH
8V Bias Current
V
S
, Inputs = 8V
V
S
, Inputs = 8V
V
S
, Inputs = 8V, post radiation
I
IL_18
Input Current Low
V
S
= 18V, Inputs = 0V
V
S
= 18V, Inputs = 0V
V
S
= 18V, Inputs = 0V, post radiation
I
IH_18
Input Current High
V
S
, Inputs = 18V
V
S
, Inputs = 18V
V
S
, Inputs = 18V, post radiation
I
IL_8
Input Current Low
V
S
= 8V, Inputs = 0V
V
S
= 8V, Inputs = 0V
V
S
= 8V, Inputs = 0V, post radiation
I
IH_8
Input Current High
V
S
, Inputs = 8V
V
S
, Inputs = 8V
V
S
, Inputs = 8V, post radiation
V
OH
Output Voltage High
V
S
= 8V,
I
OUT
= 5mA
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HS-4424DRH, HS4424DEH
Electrical Specifications
PARAMETER
V
OL
V
OH
V
OL
V
OH
V
OL
V
OH
V
OL
V
OH
V
OL
V
OH
V
OL
V
IH_18
V
IL_18
V
IHYS_18
V
IH_12
V
IL_12
V
HYS_12
V
IH_8
V
IL_8
V
HYS_8
UVLO_r
UVLO_f
HYS_UVLO
Min_PW
V
CC
= 8V, 12V, 18V, T
A
= +25°C, unless otherwise noted.
Boldface limits apply across the operating
MIN
(Note
5)
MAX
(Note
5)
0.8
0.8
temperature range, -55°C to +125°C; over radiation total ionizing dose.
(Continued)
DESCRIPTION
Output Voltage Low
Output Voltage High
Output Voltage Low
Output Voltage High
Output Voltage Low
Output Voltage High
Output Voltage Low
Output Voltage High
Output Voltage Low
Output Voltage High
Output Voltage Low
Input Voltage High Threshold
Input Voltage Low Threshold
Input Voltage Threshold Hysteresis
Input Voltage High Threshold
Input Voltage Low Threshold
Input Voltage Threshold Hysteresis
Input Voltage High Threshold
Input Voltage Low Threshold
Input Voltage Threshold Hysteresis
Rising Undervoltage Lockout
Falling Undervoltage Lockout
Undervoltage Lockout Hysteresis
Minimum Input Pulse Width
UVLO_r - UVLO_f
100
TEST CONDITIONS
TYP
0.45
V
S
- 0.95
V
S
- 1.1
V
S
- 0.75
0.75
V
S
- 0.75
V
S
- 0.75
V
S
- 0.45
0.45
V
S
- 0.95
V
S
- 1.1
V
S
- 0.75
0.75
V
S
- 0.75
V
S
- 0.75
V
S
- 0.45
0.45
V
S
- 0.95
V
S
- 1.1
V
S
- 0.75
0.75
3
3.1
V
S
= 18V
V
S
= 18V
V
S
= 12V
V
S
= 12V
V
S
= 12V
V
S
= 8V
V
S
= 8V
V
S
= 8V
100
7.2
6.9
7.1
6.8
23
24
7.45
7.5
7.8
7.95
7.75
7.9
100
3
3.1
0.8
0.8
100
3
3.1
0.8
0.8
0.8
0.8
0.95
1.1
V
S
= 18V
0.8
0.8
0.95
1.1
0.8
0.8
0.95
1.1
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
mV
V
V
V
V
mV
V
V
V
V
mV
V
V
V
V
mV
mV
ns
V
S
= 8V,
I
OUT
= 5mA
V
S
= 8V,
I
OUT
= 50mA
V
S
= 8V,
I
OUT
= 50mA
V
S
= 12V,
I
OUT
= 5mA
V
S
= 12V,
I
OUT
= 5mA
V
S
= 12V,
I
OUT
= 50mA
V
S
= 12V,
I
OUT
= 50mA
V
S
= 18V,
I
OUT
= 5mA
V
S
= 18V,
I
OUT
= 5mA
V
S
= 18V,
I
OUT
= 50mA
V
S
= 18V,
I
OUT
= 50mA
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Microcontroller MCU
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