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Datasheet> All Categories > Discrete semiconductor> The transistor> NVMFS5C450NWFT1G
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NVMFS5C450NWFT1G

Description
Single N−Channel Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size76KB，6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NVMFS5C450NWFT1G Overview

Single N−Channel Power MOSFET

NVMFS5C450NWFT1G Parametric

Parameter NameAttribute value
Brand NameON Semiconduc
Is it lead-free?Lead free
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F5
Manufacturer packaging code488AA
Reach Compliance Code_compli
Factory Lead Time29 weeks
Avalanche Energy Efficiency Rating (Eas)215 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)102 A
Maximum drain current (ID)102 A
Maximum drain-source on-resistance0.0033 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)28 pF
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)68 W
Maximum pulsed drain current (IDM)554 A
GuidelineAEC-Q101
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

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NVMFS5C450N
Power MOSFET
40 V, 3.3 mW, 102 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS5C450NWF − Wettable Flank Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJC
(Notes 1, 3)
Power Dissipation
R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2, 3)
Power Dissipation
R
qJA
(Notes 1 & 2)
Pulsed Drain Current
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±20
102
72
68
34
24
17
3.6
1.8
554
−55 to
+ 175
65
215
260
A
°C
A
mJ
°C
W
A
W
Unit
V
V
A
www.onsemi.com
V
(BR)DSS
40 V
R
DS(ON)
MAX
3.3 mW @ 10 V
I
D
MAX
102 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I
L(pk)
= 7.0 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
XXXXXX
AYWZZ
D
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXXXX = 5C450N
XXXXXX =
(NVMFS5C450N) or
XXXXXX =
450NWF
XXXXXX =
(NVMFS5C450NWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
2.2
41
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2015
1
September, 2017 − Rev. 2
Publication Order Number:
NVMFS5C450N/D

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Description Single N−Channel Power MOSFET Single N−Channel Power MOSFET Single N−Channel Power MOSFET Single N−Channel Power MOSFET Single N−Channel Power MOSFET MOSFET N-CH 40V 24A 102A 5DFN MOSFET N-CH 40V 24A 102A 5DFN MOSFET N-CH 40V 24A 102A 5DFN MOSFET N-CH 40V 24A 102A 5DFN
Brand Name ON Semiconduc - ON Semiconduc ON Semiconduc ON Semiconduc ON Semiconductor - - ON Semiconductor
Is it lead-free? Lead free - Lead free Lead free Lead free Lead free - - Lead free
Maker ON Semiconductor - ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor - - ON Semiconductor
package instruction SMALL OUTLINE, R-PDSO-F5 - SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PDSO-F5 - - SMALL OUTLINE, R-PDSO-F5
Manufacturer packaging code 488AA - 488AA 488AA 488AA 488AA - - 488AA
Reach Compliance Code _compli - _compli _compli _compli not_compliant - - not_compliant
Factory Lead Time 29 weeks - 29 weeks 29 weeks 29 weeks 8 weeks - - 9 weeks
Avalanche Energy Efficiency Rating (Eas) 215 mJ - 215 mJ 215 mJ 215 mJ 215 mJ - - 215 mJ
Shell connection DRAIN - DRAIN DRAIN DRAIN DRAIN - - DRAIN
Configuration SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - - SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 40 V - 40 V 40 V 40 V 40 V - - 40 V
Maximum drain current (Abs) (ID) 102 A - 102 A 102 A 102 A 102 A - - 102 A
Maximum drain current (ID) 102 A - 102 A 102 A 102 A 102 A - - 102 A
Maximum drain-source on-resistance 0.0033 Ω - 0.0033 Ω 0.0033 Ω 0.0033 Ω 0.0033 Ω - - 0.0033 Ω
FET technology METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - - METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 28 pF - 28 pF 28 pF 28 pF 28 pF - - 28 pF
JESD-30 code R-PDSO-F5 - R-PDSO-F5 R-PDSO-F5 R-PDSO-F5 R-PDSO-F5 - - R-PDSO-F5
JESD-609 code e3 - e3 e3 e3 e3 - - e3
Humidity sensitivity level 1 - 1 1 1 1 - - 1
Number of components 1 - 1 1 1 1 - - 1
Number of terminals 5 - 5 5 5 5 - - 5
Operating mode ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - - ENHANCEMENT MODE
Maximum operating temperature 175 °C - 175 °C 175 °C 175 °C 175 °C - - 175 °C
Minimum operating temperature -55 °C - -55 °C -55 °C -55 °C -55 °C - - -55 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL - - N-CHANNEL
Maximum power dissipation(Abs) 68 W - 68 W 68 W 68 W 68 W - - 68 W
Maximum pulsed drain current (IDM) 554 A - 554 A 554 A 554 A 554 A - - 554 A
Guideline AEC-Q101 - AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 - - AEC-Q101
surface mount YES - YES YES YES YES - - YES
Terminal surface Tin (Sn) - Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) - - Tin (Sn)
Terminal form FLAT - FLAT FLAT FLAT FLAT - - FLAT
Terminal location DUAL - DUAL DUAL DUAL DUAL - - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
Transistor component materials SILICON - SILICON SILICON SILICON SILICON - - SILICON

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