EEWORLDEEWORLDEEWORLD

Part Number

Search

WBC-T0303GG-06-1370-FD

Description
Array/Network Resistor, Center Tap, Thin Film, 0.25W, 137ohm, 100V, 1% +/-Tol, -50,50ppm/Cel, 0303,
CategoryPassive components    The resistor   
File Size376KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

WBC-T0303GG-06-1370-FD Overview

Array/Network Resistor, Center Tap, Thin Film, 0.25W, 137ohm, 100V, 1% +/-Tol, -50,50ppm/Cel, 0303,

WBC-T0303GG-06-1370-FD Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid802705352
Reach Compliance Codecompliant
ECCN codeEAR99
structureChip
Network TypeCenter Tap
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package length0.762 mm
Package formSMT
Package width0.762 mm
method of packingTray
Rated power dissipation(P)0.25 W
GuidelineMIL-PRF-38534
resistance137 Ω
Resistor typeARRAY/NETWORK RESISTOR
seriesWBC(TAPPED)
size code0303
technologyTHIN FILM
Temperature Coefficient-50,50 ppm/°C
Tolerance1%
Operating Voltage100 V
Wire Bondable
Chip Resistors
WBC Series
Discrete or tapped schematics
MIL inspection available
High resistor density
IRC Advanced Film Division
IRC’s WBC series wire bondable chip resistors are ideally suited for
the most demanding hybrid application. The WBC combines IRC’s
TaNSil
®
tantalum nitride thin film technology with silicon substrate processing to produce an extremely small
footprint device with the proven stability, reliability and moisture performance of IRC’s TaNSil
®
resistor film.
Available in a wide range of tolerances and temperature coefficients to fit a variety of hybrid circuit applica-
tions. Custom resistance values, sizes and schematics are available on request from the factory.
Physical Data
R0202 - Discrete
(0.508mm ±0.025)
0.020˝ ±0.001
Electrical Data
Absolute Tolerance
Absolute TCR
R
Package Power Rating
(@ 70°C)
Rated Operating Voltage
(not to exceed
P x R )
Operating Temperature
Back contact
Noise
Substrate Material
Top contact
Substrate Thickness
Aluminum
Gold
R0202 and
T0303
B0202
Passivation
to ±0.1%
to ±25ppm/°C
250mW
100V
-55°C to +150°C
<-30dB
Oxidized Silicon
(10KÅ SiO
2
min)
0.010˝ ±0.001
(0.254mm ±0.025)
10KÅ minimum
15KÅ minimum
Silicon
(Gold available)
Gold
3KÅ minimum
Silicon Dioxide or
Silicon Nitride
0.004˝ min bond pad size
0.020˝ ±0.001
(0.508mm ±0.025)
B0202 - Discrete back contact
(0.508mm ±0.025)
0.020˝ ±0.001
R
Top contact
pad chamfered
0.004˝ min bond pad size
0.020˝ ±0.001
(0.508mm ±0.025)
T0303 - Tapped network ½R + ½R
Bond Pad
Metallization
(0.762mm ±0.025)
0.030˝ ±0.001
Backside
½R
½R
0.030˝ ±0.001
(0.762mm ±0.025)
0.004˝ min bond pad size
General Note
IRC reserves the right to make changes in product specification without notice or liability.
All information is subject to IRC’s own data and is considered accurate at time of going to print.
© IRC Advanced Film Division
• Corpus Christi Texas 78411 USA
Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Email: afdsales@irctt.com • Website: www.irctt.com
A subsidiary of
TT electronics plc
WBC Series Issue April 2006
High-speed circuit design and simulation analysis: Cadence example design details
Circuit design, especially modern high-speed circuit system design, is a job that changes with each passing day as electronic technology develops. It is very interesting and challenging. The purpose o...
arui1999 Download Centre
I would like to ask a question about ultrasonic binary gas concentration measurement?
Has anyone in the forum done research on ultrasonic binary gas concentration measurement? For example, measuring oxygen concentration in air-oxygen mixed gas. I see such sensors on the Internet, but m...
qzc飘曳 Sensor
Is it "reasonable..." to fly a kite made of your own photo?
Original post link: http://mc.dfrobot.com.cn/thread-275083-1-1.html http://mc.dfrobot.com.cn/thread-275083-1-1.html Not long ago, I found a Japanese guy named ARuFa who lives in people's hearts. Out o...
kikiwu DIY/Open Source Hardware
Why is the application of gallium nitride in RF electronics still so popular?
最近,QORVO又推了一篇氮化镓在射频电子中的应用,在这篇中指出,GaN 非常适合提供毫米波领域所需的高频率和宽带宽。它可以满足性能和小尺寸要求,如下图所示。使用毫米波频段的应用需要高度定向的波束形成技术(波束形成将无线电信号聚焦成强指向性的波束,从而提高功率并最大限度地减少用户设备上的干扰)。这意味着 RF 子系统将需要大量有源元件来驱动相对紧凑的孔径。GaN 非常适合这些应用,因为以小封装尺寸...
alan000345 RF/Wirelessly
When the MOS is turned on like 2301, is the VDS voltage 0? That is, there is no loss? The simulation shows that there is no loss.
When the MOS is turned on like 2301, is the VDS voltage 0? That is, there is no loss? The simulation shows that there is no loss....
QWE4562009 Integrated technical exchanges
Battery Management System BMS Technical Data Transfer
1:[/size][/font][/color][/b][color=rgb(51, 51, 1: [/size][/font][/color][/b][color=rgb(51, 51, 51)][font=Microsoft YaHei][size=10.5pt][font=Microsoft YaHei]2: [/size][/font][/color][/b][color=rgb(51, ...
q2512262471 Automotive Electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号