WSB1151
PNP EPITAXIAL SILICON TRANSISTOR
HIGH CURRENT AMPLIFIER
◇
Low Collector Saturation Voltage
◇
Complement to WSD1691
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current(DC)
Collector Current(Pulse)
Collector Power Dissipation(Tc=25
℃
)
Collector Power Dissipation(Ta=25
℃
)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
C
P
C
Tj
Tstg
(Ta=25
℃
)
Value
-60
-60
-7
-5.0
-8.0
20
1.3
150
-55~
+150
Unit
V
V
V
A
A
W
W
℃
℃
1. Emitter
2. Collector
3. Base
1
2
3
ELECTRICAL CHARACTERISTICS
Characteristic
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Turn on Time
Symbol
I
CBO
I
EBO
h
FE1
#h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
(Ta=25
℃
, unless otherwise specified)
Test Condition
V
CB=-
50V ,I
E=
0
V
EB
=-7V ,I
C
=0
V
CE
=-1V ,I
C
=-100mA
V
CE
=-1V ,I
C
=-2.0A
V
CE
=-2V, I
C
=-5.0A
I
C
=-2A, I
B
=-200mA
I
C
=-2A, I
B
=-200mA
I
C
=-2.0A, R
L
=5
Ω
I
B1
=-I
B2
=200mA,
V
CC
=-10V
Min
TYP
MA
X
-10
-10
Unit
㎂
㎂
60
100
50
200
400
V
V
㎲
㎲
㎲
-0.14 -0.3
-0.9
0.15
0.78
0.18
-1.2
1
2.5
1
Storage Time
Fall Time
* Pulse Test :PW=350㎲ ,Duty Cycle=2% Pulsed
# hFE(2) Classification:
Classification
h
FE
O
100~200
Y
160~320
G
200~400
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
2
WSB1151
Static Characteristics
-12
-10
DC Current Gain
1000
VCE=-2V
IB=-200mA
300
hFE ,DC Current Gain
Ic, Collector Current, A
VBE(sat) VCE(sat),Saturation Voltage,V
、
Pc(W),Power Dissipation
-8
-6
IB=-100mA
IB=-60mA
IB=-30mA
IB=-20mA
IB=-10mA
0
-0.4
-0.8
-1.2
100
30
10
-4
-2
-1.6
-2.0
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
Vce,Collector-Emitter Voltage ,V
IC,Collector Current ,A
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
IC=10IB
1000
Current Gain-Bandwidth Product
VCE=-5V
Current Gain Bandwidth Product,f
T
(MH
Z
)
-
300
100
50
30
10
-1000
VBE(sat)
-100
-10
VCE(sat)
1
-1
-10
-100
-1000 -2000
-0.01
-0.1
-1
-2
IC,Collector Current,mA
IC,Collector Current,A
-10
Power Derating
30
20
15
Safe Operating Area
Ic Max(Pulse)
100uS
1mS
-3
10mS
Ic Max(DC)
-1
Ic(A)Collector Current
10
5
-0.3
-0.1
50
100
150
200
250
-0.01
-1
-3
-10
-30
-100 -300
-1000
Tc(℃), Case Temperature
VCE(V),Collector Emitter Voltage
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
2
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