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BPY62-2

Description
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
CategoryLED optoelectronic/LED    photoelectric   
File Size329KB,6 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BPY62-2 Overview

NPN-Silizium-Fototransistor Silicon NPN Phototransistor

BPY62-2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Coll-Emtr Bkdn Voltage-Min50 V
ConfigurationSINGLE
Maximum dark power100 nA
Infrared rangeYES
JESD-609 codee0
Nominal photocurrent3 mA
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum on-state current0.05 A
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Optoelectronic device typesPHOTO TRANSISTOR
peak wavelength850 nm
Maximum power dissipation0.3 W
Maximum response time0.000005 s
shapeROUND
size2.75 mm
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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