NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | SIEMENS |
Reach Compliance Code | unknown |
Other features | HIGH RELIABILITY |
Coll-Emtr Bkdn Voltage-Min | 50 V |
Configuration | SINGLE |
Maximum dark power | 100 nA |
Infrared range | YES |
JESD-609 code | e0 |
Nominal photocurrent | 3 mA |
Installation features | THROUGH HOLE MOUNT |
Number of functions | 1 |
Maximum on-state current | 0.05 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
Optoelectronic device types | PHOTO TRANSISTOR |
peak wavelength | 850 nm |
Maximum power dissipation | 0.3 W |
Maximum response time | 0.000005 s |
shape | ROUND |
size | 2.75 mm |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Base Number Matches | 1 |
BPY62-2 | BPY62-4 | BPY62 | BPY62-5 | BPY62-3 | Q62702-P1113 | Q60215-Y62 | Q60215-Y1112 | Q60215-Y1113 | Q60215-Y1111 | |
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