BPY62-4 datasheet, PDF - EEWORLD Datasheet

BPY62-4: DescriptionNPN-Silizium-Fototransistor Silicon NPN Phototransistor; CategoryLED optoelectronic/LED photoelectric; File Size329KB，6 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BPY62-4 Overview

NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY
Coll-Emtr Bkdn Voltage-Mi	50 V
Configuration	SINGLE
Maximum dark power	100 nA
Infrared range	YES
JESD-609 code	e0
Nominal photocurrent	7.2 mA
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum on-state current	0.05 A
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Optoelectronic device types	PHOTO TRANSISTOR
peak wavelength	850 nm
Maximum power dissipation	0.3 W
Maximum response time	0.000009 s
shape	ROUND
size	2.75 mm
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Base Number Matches	1

	BPY62-4	BPY62-2	BPY62	BPY62-5	BPY62-3	Q62702-P1113	Q60215-Y62	Q60215-Y1112	Q60215-Y1113	Q60215-Y1111
Description	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	NPN-Silizium-Fototransistor Silicon NPN Phototransistor	NPN-Silizium-Fototransistor Silicon NPN Phototransistor

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