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10A8

Description
10 A, 800 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size59KB,2 Pages
ManufacturerGoodwork Semiconductor ( GW )
Websitehttp://www.goodwork.com.tw/
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10A8 Overview

10 A, 800 V, SILICON, RECTIFIER DIODE

10A05
10.0 AMP SILICON RECTIFIERS
THRU
10A10
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
10.0 Amperes
R-6
.360(9.1)
.340(8.6)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
.052(1.3)
.048(1.2)
DIA.
.360(9.1)
.340(8.6)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=50 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 10.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R JA (Note 2)
Operating Temperature Range T
J
Storage Temperature Range T
STG
NOTES:
10A05
50
35
50
10A1
100
70
100
10A2
200
140
200
10A4
400
280
400
10.0
400
1.0
10.0
400
150
10
-65
-65
10A6
600
420
600
10A8
800
560
800
10A10 UNITS
1000
700
1000
V
V
V
A
A
V
A
A
pF
C/W
C
C
Ta=100 C
+150
+150
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.
228

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