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MMBD4148

Description
0.15 A, 75 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size252KB,2 Pages
ManufacturerGSME Electronics
WebsiteHttp://www.gsme.com.cn
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MMBD4148 Overview

0.15 A, 75 V, SILICON, SIGNAL DIODE

MMBD4148 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionPLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.3500 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage75 V
Maximum average forward current0.1500 A
桂林斯壯微電子有限責任公司
Guilin Strong Micro-Electronics Co.,Ltd.
GM4148
SWITCHING DIODE
開關二極管
(MMBD4148)
MMBD4148)
FEATURES
特點
Characteristic
特性參數
Power dissipation
耗散功率
Forward Current
正向電流
Reverse Voltage
反向電壓
Junction and Storage Temperature
結溫和儲藏溫度
DEVICE
Symbol
符號
P
D
(Ta=25
)
I
F
V
R
T
J
,
T
stg
Max
最大值
225
200
75
Unit
單½
mW
mA
V
-55to+150
MARKING
打標
MMBD4148=A6
MMBD4148=A6
ELECTRICAL
CHARACTERISTICS
電特性
Symbol
符號
V
(BR)
I
R
Min
最小值
75
Max
最大值
1
Unit
單½
V
uA
(T
A
=
25
unless otherwise noted
如無特殊说明,溫度爲
25℃
)
Characteristic
特性參數
Reverse Breakdown Voltage
反向擊穿電壓
(I
R
=100uA)
Reverse Leakage Current
反向漏電流
(V
R
=75V)
Forward Voltage(Test Condition)正向電壓
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
Diode Capacitance
二極體電容
(V
R
=0V, f=1MHz)
Reverse Recovery Time
反向恢復時間
SOT-23
内部结构
1
V
F
C
D
Trr
715
855
1000
1250
2
6
mV
pF
nS

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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