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KX6N80F

Description
N-Channel MOSFET
File Size3MB,6 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet View All

KX6N80F Overview

N-Channel MOSFET

DIP Type
N-Channel
MOSFET
KX6N80F
TO-220F
±0.20
MOSFET
Unit: mm
±0.20
φ
1
3.
8
.2
±0
0
2.54
±0.20
0.70
±0.20
R
DS(ON)
1.9Ω (V
GS
= 10V)
Low Gate Charge (Typ. 27 nC)
100% Avalanche Tested
Fast switching
D
12.42
±0.20
I
D
= 7 A (V
GS
= 10V)
3.30
±0.20
V
DS (V)
= 800V
15.87
±0.20
6.68
±0.20
Features
2.76
±0.20
9.75
±0.20
1.47max
0.50
±0.20
0.80
±0.20
2.54typ
2.54typ
G
S
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
- Derate above 25°C
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note.2)
(Note.1)
(Note.3)
E
AS
E
AR
dv/dt
R
thJA
R
thJC
T
J
T
stg
(Note.1)
Tc=25℃
Tc=25℃
Tc=100℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Rating
800
±30
7
4.2
28
56
0.44
650
16.7
4.5
62.5
2.25
150
-55 to 150
W
W/℃
mJ
V/ns
℃/W
A
Unit
V
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Note.1: Repetitive Rating : Pulse width limited by maximum junction temperature
Note.2: L = 25mH, I
AS
= 7A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
Note.3: I
SD
7A, di/dt
200A/μs, V
DD
BV
DSS
, Starting T
J
= 25°C
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