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RJF0610DSP_15

Description
Silicon N Channel MOS FET Series Power Switching
File Size93KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJF0610DSP_15 Overview

Silicon N Channel MOS FET Series Power Switching

Target Specifications
Datasheet
RJF0610DSP
Silicon N Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
R07DS0560EJ0200
Rev.2.00
Apr 16, 2012
Features
Logic level operation (5 to 6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Temperature hysteresis type.
High density mounting
Power supply voltage applies 12 V and 24 V.
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
87
65
12
34
2
G
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
D
7
D
8
D
5
D
6
Gate Resistor
Temperature
Sensing
Circuit
Self
Return
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
4
G
Gate Resistor
Temperature
Sensing
Circuit
Self
Return
Circuit
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1
MOS1
S
MOS2
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V
DSS
60
Gate to source voltage
V
GSS
16
Gate to source voltage
V
GSS
–2.5
Note4
Drain current
I
D
1.5
Body-drain diode reverse drain current
I
DR
1.5
Note 3
Avalanche current
I
AP
0.95
Note 3
Avalanche energy
E
AR
77.4
Note 1
Channel dissipation
Pch
2
Note 2
Channel dissipation
Pch
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40
40
1.6 mm), PW
10 s
2. 2 Drive operation: When using the glass epoxy board (FR4 40
40
1.6 mm), PW
10 s
3. Tch = 25C, Rg
50
,
L = 100 mH
4. It provides by the current limitation lower bound value.
Unit
V
V
V
A
A
A
mJ
W
W
C
C
R07DS0560EJ0200 Rev.2.00
Apr 16, 2012
Page 1 of 7
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