SSD50N08-14D
Elektronische Bauelemente
55A, 80V, R
DS(ON)
11m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R
DS(on)
and to
ensure minimal power loss and heat dissipation.
TO-252(D-Pack)
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe TO-252
saves board space
Fast switching speed
High performance trench technology
A
B
C
D
GE
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
M
K
HF
N
O
P
J
REF.
PACKAGE INFORMATION
Package
TO-252
MPQ
2.5K
Leader Size
13’ inch
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
2
Drain
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
2
1
1
Symbol
V
DS
V
GS
T
A
=25℃
I
D
I
DM
I
S
P
D
T
J
, T
STG
Ratings
80
±20
55
200
55
50
-55 ~ 175
Unit
V
V
A
A
A
W
°
C
Continuous Source Current (Diode Conduction)
Power Dissipation
1
T
A
=25℃
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
1
R
θJA
R
θJC
40
3.0
° /W
C
° /W
C
21-Jan-2014 Rev. A
Page 1 of 4
SSD50N08-14D
Elektronische Bauelemente
55A, 80V, R
DS(ON)
11m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(ON)
1
Min.
Static
1
-
-
-
27.5
-
-
Typ.
-
-
-
-
-
-
-
35
0.82
2
Max.
-
±100
1
25
-
11
13
-
-
Unit
V
nA
µA
A
m
S
V
Test conditions
V
DS
=V
GS
, I
D
=250µA
V
DS
=0, V
GS
=±20V
V
DS
=64V, V
GS
=0
V
DS
=64V, V
GS
=0,T
J
=55°
C
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=27.5A
V
GS
=4.5V, I
D
=25.3A
V
DS
=15V, I
D
=27.5A
I
S
=27A, V
GS
=0
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1
R
DS(ON)
g
fs
V
SD
-
-
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
-
-
-
5052
471
446
58
14
39
19
45
178
62
-
-
-
-
-
-
-
-
-
-
nS
nC
pF
V
DS
=15 V
V
GS
=0
F=1MHZ
I
D
=20A
V
DS
=40V
V
GS
=4.5V
V
DS
=40V
I
D
=20A
R
L
= 2Ω
V
GEN
=10V
R
GEN
=6Ω
Notes:
1. Pulse test： PW
≦
300 us duty cycle
≦
2％.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2014 Rev. A
Page 2 of 4
SSD50N08-14D
Elektronische Bauelemente
55A, 80V, R
DS(ON)
11m
N-Ch Enhancement Mode Power MOSFET
Typical Electrical Characteristics
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2014 Rev. A
Page 3 of 4
SSD50N08-14D
Elektronische Bauelemente
55A, 80V, R
DS(ON)
11m
N-Ch Enhancement Mode Power MOSFET
Typical Electrical Characteristics
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2014 Rev. A
Page 4 of 4
Analog electronics
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