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UT2305G-AE3-R

Description
P-CHANNEL ENHANCEMENT MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size306KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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UT2305G-AE3-R Overview

P-CHANNEL ENHANCEMENT MOSFET

UT2305G-AE3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)4.2 A
Maximum drain-source on-resistance0.053 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)10 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
UT2305
4.2A, 20V P-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UT2305
is P-channel enhancement mode power
MOSFET, designed in serried ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
SYMBOL
ORDERING INFORMATION
Ordering Number
UT2305G-AE2-R
UT2305G-AE3-R
UT2305G-AG3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23-3
SOT-23
SOT-26
S: Source
1
S
S
D
Pin Assignment
4
5
2
3
G D
-
-
G D
-
-
D G S D
6
-
-
D
Packing
Tape Reel
Tape Reel
Tape Reel
Note:
MARKING
SOT-23 / SOT-23-3
SOT-26
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-133.H

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