SMBJ36A datasheet, PDF - EEWORLD Datasheet

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SMBJ36A: DescriptionPolarity: Unidirectional Peak pulse current (10/1000us): 10.3A Clamping voltage: 58.1V Breakdown voltage (minimum): 40V Reverse shutdown voltage (typ.): 36V VBR=40V VC=58.1V IPP= 10.3A unidirectional; CategoryDiscrete semiconductor TVS diode; File Size1MB，5 Pages; ManufacturerFORMOSAMS; Websitehttp://www.formosagr.com/; FMS is a leading global manufacturer and supplier with the advantages of upstream and downstream semiconductor integration and proprietary core technologies. It is mainly engaged in the research and development and production of discrete devices such as TVS, Schottky diodes, fast recovery diodes, bridge diodes, and MOS power semiconductors. With its insight into market trends, FMS continues to launch thin packages that meet market demand. At the same time, in order to layout product market segments and the company's marketing strategy planning, MOS products launched the Anbon Semi brand, which is also owned by Shenzhen Meiliwei Semiconductor.

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SMBJ36A Overview

Polarity: Unidirectional Peak pulse current (10/1000us): 10.3A Clamping voltage: 58.1V Breakdown voltage (minimum): 40V Reverse shutdown voltage (typ.): 36V VBR=40V VC=58.1V IPP= 10.3A unidirectional

SMBJ36A Parametric

Parameter Name	Attribute value
polarity	Unidirectional
Peak pulse current (10/1000us)	10.3A
clamping voltage	58.1V
Breakdown voltage (minimum value)	40V
Reverse shutdown voltage (typ)	36V

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