UNISONIC TECHNOLOGIES CO., LTD
UT2305
4.2A, 20V P-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
UT2305
is P-channel enhancement mode power
MOSFET, designed in serried ranks. With fast switching speed, low
on-resistance, favorable stabilization.
Used in commercial and industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
SYMBOL
ORDERING INFORMATION
Ordering Number
UT2305G-AE2-R
UT2305G-AE3-R
UT2305G-AG3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-23-3
SOT-23
SOT-26
S: Source
1
S
S
D
Pin Assignment
4
5
2
3
G D
-
-
G D
-
-
D G S D
6
-
-
D
Packing
Tape Reel
Tape Reel
Tape Reel
Note:
MARKING
SOT-23 / SOT-23-3
SOT-26
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QW-R502-133.H
UT2305
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
V
Continuous Drain Current (Note 3) (T
A
=25°C)
I
D
-4.2
A
Pulsed Drain Current (Note 1, 2)
I
DM
-10
A
SOT-23-3
0.83
W
Power Dissipation (T
A
=25°C)
SOT-23
P
D
1.38
W
SOT-26
1.1
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
SOT-23-3
SOT-23
SOT-26
θ
JA
RATING
150
90
110
UNIT
°C/W
°C/W
°C/W
Junction to Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
TEST CONDITIONS
V
GS
=0V, I
D
=-250μA
V
DS
=-20V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
Reference to 25°C, I
D
=-1mA
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-10V, I
D
=-4.5A
V
GS
=-4.5V, I
D
=-4.2A
V
GS
=-2.5V, I
D
=-2.0A
V
GS
=-1.8V, I
D
=-1.0A
MIN
-20
TYP
MAX UNIT
V
-1
μA
±100 nA
V/°C
-1.2
53
65
100
250
900
116
120
12
36
326
200
30
5
2.5
-1.2
27.7
22
V
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Drain-Source Leakage Current
I
DSS
Gate-Source Leakage Current
I
GSS
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
Drain-Source On-State Resistance (Note 2)
R
DS(ON)
-0.1
-0.5
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
t
D(ON)
Turn-ON Rise Time
t
R
V
DS
=-15V, V
GS
=-10V,
I
D
=-1A, R
G
=6Ω, R
D
=15Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
Total Gate Charge (Note 2)
Q
G
V
DS
=-16V, V
GS
=-4.5V,
Gate-Source Charge
Q
GS
I
D
=-4.2A
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
V
SD
V
GS
=0V, I
S
=-1.2A
Reverse Recovery Time
t
rr
V
GS
=0V, I
S
=-4.2A,
dI/dt=100A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300μs,
duty cycle≤2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 270°C/W when mounted on min.
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QW-R502-133.H
UT2305
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current,-I
D
(A)
Drain Current,-I
D
(A)
Gate Charge Characteristics
12
Gate to Source Voltage,-V
GS
(V)
10
8
6
4
2
0
0
5
10
15
20
25
Total Gate Charge,Q
G
(nC)
10
1
C (pF)
I
D
=-4.2A
V
DS
=-16V
1000
10000
Typical Capacitance Characteristics
f=1.0MH
Z
C
ISS
C
OSS
100
C
RSS
5
9
13
17
21
25
29
Drain-to-Source Voltage,-V
DS
(V)
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UT2305
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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