UNISONIC TECHNOLOGIES CO., LTD
UF450
14A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The
UF450
uses advanced UTC technology to provide
excellent R
DS (ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch, in PWM
applications, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
FEATURES
* R
DS(ON)
< 0.4Ω@V
GS
= 10V
* Ultra Low Gate Charge (Max. 150nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 340pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF450L-TF1-T
UF450G-TF1-T
UF450L-TF2-T
UF450G-TF2-T
UF450L-T47-T
UF450G-T47-T
UF450L-TC3-T
UF450G-TC3-T
UF450L-T3P-T
UF450G-T3P-T
Package
TO-220F1
TO-220F2
TO-247
TO-230
TO-3P
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-185.H
UF450
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
500
V
Gate to Source Voltage
V
GSS
±20
V
Continuous Drain Current
I
D
14
A
Pulsed Drain Current (Note 2)
I
DM
56
A
Avalanche Current (Note 2)
I
AR
14
A
Single Pulse Avalanche Energy (Note 3)
E
AS
760
mJ
TO-220F1
36
TO-220F2
38
Power Dissipation (T
C
=25°C)
TO-247
P
D
190
W
TO-230
147
TO-3P
215
Peak Diode Recovery dv/dt (Note 4)
dv/dt
3.5
V/ns
Junction Temperature
T
J
+150
°C
Strong Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. V
DD
=50V, starting T
J
=25°C, L=7.0mH, I
AS
=14A, R
G
=25Ω
4. I
SD
≤14A,
di/dt≤130A/μs, V
DD
≤BV
DSS
, T
J
≤150°C
THERMAL DATA
SYMBOL
θ
JA
RATINGS
62.5
40
3.47
3.29
0.65
0.85
0.58
UNIT
°C/W
PARAMETER
TO-220F1/ TO-220F2
TO-230
Junction to Ambient
TO-247/TO-3P
TO-220F1
TO-220F2
Junction to Case
TO-247
TO-230
TO-3P
θ
JC
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-185.H
UF450
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN
500
TYP MAX UNIT
V
µA
µA
nA
V/°C
4.0
0.4
V
Ω
pF
pF
pF
150
20
80
17
47
92
44
1.4
14
56
540
4.8
810
7.2
nC
nC
nC
ns
ns
ns
ns
V
A
A
ns
µc
V
GS
=0 V, I
D
=250µA
V
DS
=500V,V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=400V,V
GS
=0V, T
J
=125°C
Forward
V
GS
=20V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
=-20V
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
Reference to 25°C, I
D
=1.0mA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=8.4A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
(Note 1)
Total Gate Charge
Q
G
V
DS
=400V, V
GS
=10V,
Gate Source Charge
Q
GS
I
D
=14A (Note 1,2)
Gate Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=250V, I
D
=14A,
R
G
=6.2Ω , R
D
=17Ω(Note 1,2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
S
=14A, V
GS
=0V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
I
F
=14A, dI/dt≤100A/μs,
V
DD
≤50V
(Note 1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature.
25
250
100
-100
0.63
2.0
0.31
2600
720
340
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-185.H
UF450
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-185.H
UF450
TEST CIRCUITS AND WAVEFORMS (Cont.)
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-185.H
京公网安备 11010802033920号
EEWORLD
