XP202A0003MR-G
P-channel 4V (G-S) MOSFET
ETR1128-003
■FEATURES
・Low
On Resistance
・Ultra
High Speed Switching
・4V
Driving
・EU
RoHS Compliant, Pb Free
■APPLICATIONS
●
Switching
■PRODUCT
NAME
PRODUCT NAME
XP202A0003MR-G
*
PACKAGE
SOT-23
ORDER UNIT
3,000/Reel
The “-G” suffix indicates that the products are Halogen and
Antimony free as well as being fully RoHS compliant.
■
ABSOLUTE MAXIMUM RATINGS
PARMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current(Pulse) *
Channel Temperature
Storage Temperature
( 1)
( 1)
( 2)
■PIN
CONFIGURATION
SYMBOL
V
DSS
V
GSS
I
D
I
DP
Pd
Tch
Tstg
RATINGS
-30
±20
-3
-12
1
+150
- 55 ~ +150
UNITS
V
V
A
A
W
℃
℃
Channel Power Dissipation *
1. Gate
2. Source
3. Drain
SOT-23(TOP VIEW）
* PW≦10μs,duty cycle≦1%
( 2)
* Ceramic Board (900mm2×0.8mm) Mounting
■
ELECTRICAL CHARACTERISTICS
PARAMETER
Drain-Source Breakdown Voltage
Drain-Source Cut-Off Current
Gate-Source Leakage Current
Gate-Source Cut-Off Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacity
Output Capacity
Feedback capacity
Turn on Delay time
Rise Time
Turn off Delay Time
Fall Time
All Gate Charge Amount
Gate Source Charge Amount
Gate Drain Charge Amount
Diode Forward Voltage
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|yfs|
R
DS(ON)
1
R
DS(ON)
2
R
DS(ON)
3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
SD
TEST CONDITIONS
I
D
=-1mA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
=±16V,VDS=0V
V
DS
=-10V,ID=-1mA
V
DS
=-10V,ID=-3A
I
D
=-1.5A,VGS=-10V
I
D
=-1.0A,VGS=-4.5V
I
D
=-1.0A,VGS=-4V
V
DS
=-10V,f=1MHz
V
DS
=-10V,f=1MHz
V
DS
=-10V,f=1MHz
LIMITS
MIN.
-30
-
-
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
MAX.
-
-1
±10
-2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-1.2
UNITS
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
8.0
45
67
76
435
110
85
6
12
28
10
10
1.2
2.2
-0.8
I
D
=-1A
I
D
=-1A
I
D
=-1A
I
D
=-1A
V
DS
=-15V, V
GS
=-10V, I
D
=-3A
V
DS
=-15V, V
GS
=-10V, I
D
=-3A
V
DS
=-15V, V
GS
=-10V, I
D
=-3A
I
S
=-3A, V
GS
=0V
1/5
XP202A0003MR-G
■SWITCHING-TIME
TEST CIRCUIT
0V
S
90%
50Ω
VI
G
VI
10%
0V
90%
90%
D
Oscilloscope
VO
VO
10%
10%
td(off) tf
RL
td(on) tr
Oscilloscope
■EQUIVALENT
CIRCUIT
■PACKAGING
INFORMATION
●SOT-23
■MARKING
RULE
①
represents product series
3
①
②
③
④
⑤
MARK
PRODUCT SERIES
6
XP202*******-G
1
2
② ③
represents product group and number
MARK
PRODUCT
PRODUCT
GROUP
NUMBER
②
③
A
D
00
03
PRODUCT SERIES
XP202A0003**-G
④，⑤
represents production lot number
01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to ZZ repeated (G,
I, J, O, Q, W excluded)
2/5
XP202A0003MR-G
■TYPICAL
PERFORMANCE CHARACTERISTICS
(1) Drain Current vs. Drain-Source Voltage
XP202A0003MR
-4.0
-3.5
Drain Current
：
I
D
(A)
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-4.0V
-3.5V
-3.0V
V
GS
= -2.5V
-4.5V
Ta= 25
℃，
Pulse Test
(2) Drain Current vs. Drain-Source Voltage
XP202A0003MR
V
DS
= -10V
，
Pulse Test
-6
-5
Drain Current
：
I
D
(A)
-4
-3
Ta= 75
℃
-2
Ta= 25
℃
-1
0
0.0
-16.0V
-10.0V
-6.0V
Ta= -25
℃
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Drain-Source Voltage
：
V
DS
(V)
Gate-Source Voltage
：
V
GS
(V)
(3) Drain-Source On-State Resistance vs.
Gate-Source Voltage
XP202A0003MR
300
Static Drain-source On-State
Resistance: R
DS
(on) (½Ω)
250
200
150
100
50
0
0
-2
-4
-6
-8
-10 -12 -14 -16
I
D
= -1.5A
I
D
= -1.0A
Ta= 25℃
(4) Drain-Source On-State Resistance vs.
Ambient Temperature
XP202A0003MR
140
Static Drain-source On-State
Resistance：R
DS
(on)
（½Ω)
120
100
80
60
40
20
0
-50 -25
V
GS
= -10V, I
D
= -1.5A
0
25
50
75
100 125 150
V
GS
= -4.0V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -1.5A
Gate-Source Voltage
：
V
GS
(V)
Ambient Temperature
：
Ta (
℃
)
(5) Forward Transfer Admittance vs. Drain Current
XP202A0003MR
100
Forward Transfer Admittance
：
|yfs| (S)
V
DS
= -10V
(6) Source Current vs. Diode Forward Voltage
XP202A0003MR
10
Ta= 75
℃
Source Current： I
S
(A)
V
GS
= 0V
Ta= -25
℃
10
Ta=25
℃
1
Ta=25
℃
1
Ta=75
℃
0.1
Ta=-25
℃
0.01
-0.2
0.1
0.01
0.1
1
10
-0.4
-0.6
-0.8
-1.0
-1.2
Drain Current
：
I
D
(A)
Diode Forw ard Voltage
：
V
SD
(V)
3/5
XP202A0003MR-G
■TYPICAL
PERFORMANCE CHARACTERISTICS
(7) Switching Time vs. Drain Current
XP202A0003MR
1000
V
GS
= -10V, V
DS
= -15V
(8) Ciss, Coss, Crss vs. Drain-Source Voltage
XP202A0003MR
1000
Ciss
f=1MHz
Switching Time
：
t (ns)
100
tf
td(off)
tr
Ciss, Coss, Crss (pF)
100
Coss
Crss
10
td(on)
1
0.1
1
Drain Current
：
I
D
(A)
10
10
0
5
10
15
20
25
30
Drain-Source Voltage
：
V
DS
(V)
(9) Gate-Source Voltage vs. Gate Charge
XP202A0003MR
-10
Gate-Source Voltage
：
V
GS
(V)
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
= -15V, I
D
= -3A
(10) Area of Safe Operation
XP202A0003MR
100
I
D
=-12A
Operation in this area is
limited by R
DS
(on)
Drain Current: I (A)
D
10
I
D
=-3A
0.1ms
1
1ms
10ms
0.1
Ta=25
℃
Single pulse
When mounted on ceramic substrate
(900mm
2
X 0.8mm)
100ms
1000ms
DC Operation
0.01
0.01
0.1
1
10
100
Gate Charge: Qg (nc)
Drain-Source Voltage: V
DS
(V)
4/5
XP202A0003MR-G
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
5/5
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