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IRF9510

Description
3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size4MB,7 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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IRF9510 Overview

3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF9510 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage100 V
stateTRANSFERRED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeP channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current3 A
Rated avalanche energy190 mJ
Maximum drain on-resistance1.2 ohm
Maximum leakage current pulse12 A
IRF9510, SiHF9510
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
8.7
2.2
4.1
Single
S
FEATURES
- 100
1.2
Dynamic dV/dt Rating
Repetitive Avalanche Rated
P-Channel
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF9510PbF
SiHF9510-E3
IRF9510
SiHF9510
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
- 100
± 20
- 4.0
- 2.8
- 16
0.29
200
- 4.0
4.3
43
- 5.5
- 55 to + 175
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 18 mH, R
G
= 25
Ω,
I
AS
= - 4.0 A (see fig. 12).
c. I
SD
- 4.0 A, dI/dt
75 A/µs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
www.kersemi.com
1

IRF9510 Related Products

IRF9510 SIHF9510 SIHF9510-E3
Description 3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals 3 3 3
Minimum breakdown voltage 100 V 100 V 100 V
state TRANSFERRED TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle Rectangle
Package Size Flange mounting Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole THROUGH-hole
Terminal location single single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
transistor applications switch switch switch
Transistor component materials silicon silicon silicon
Channel type P channel P channel P channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type universal power supply universal power supply universal power supply
Maximum leakage current 3 A 3 A 3 A
Rated avalanche energy 190 mJ 190 mJ 190 mJ
Maximum drain on-resistance 1.2 ohm 1.2 ohm 1.2 ohm
Maximum leakage current pulse 12 A 12 A 12 A
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