SIHF9510-E3 datasheet, PDF - EEWORLD Datasheet

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SIHF9510-E3: Description3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size4MB，7 Pages; ManufacturerKersemi Electronic; Websitehttp://www.kersemi.com

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SIHF9510-E3 Overview

3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

SIHF9510-E3 Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	100 V
state	TRANSFERRED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Single WITH BUILT-IN diode
Shell connection	DRAIN
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Channel type	P channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	universal power supply
Maximum leakage current	3 A
Rated avalanche energy	190 mJ
Maximum drain on-resistance	1.2 ohm
Maximum leakage current pulse	12 A

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IRF9510, SiHF9510

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

(Ω)

(Max.) (nC)

(nC)

Configuration

= - 10 V

8.7

2.2

4.1

Single

FEATURES

- 100

1.2

•

Dynamic dV/dt Rating

Repetitive Avalanche Rated

P-Channel

175 °C Operating Temperature

Fast Switching

Ease of Paralleling

Simple Drive Requirements

Lead (Pb)-free Available

Available

RoHS*

COMPLIANT

TO-220

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

P-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

TO-220

IRF9510PbF

SiHF9510-E3

IRF9510

SiHF9510

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

at - 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

LIMIT

- 100

± 20

- 4.0

- 2.8

- 16

0.29

200

- 4.0

4.3

- 5.5

- 55 to + 175

300

1.1

UNIT

W/°C

V/ns

°C

lbf · in

N·m

= 25 °C

for 10 s

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= - 25 V, starting T

= 25 °C, L = 18 mH, R

= 25

Ω,

= - 4.0 A (see fig. 12).

c. I

≤

- 4.0 A, dI/dt

≤

75 A/µs, V

≤

, T

≤

175 °C.

d. 1.6 mm from case.

www.kersemi.com

SIHF9510-E3 Related Products

	SIHF9510-E3	SIHF9510	IRF9510
Description	3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB	3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB	3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals	3	3	3
Minimum breakdown voltage	100 V	100 V	100 V
state	TRANSFERRED	TRANSFERRED	TRANSFERRED
packaging shape	Rectangle	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting	Flange mounting
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole
Terminal location	single	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
Shell connection	DRAIN	DRAIN	DRAIN
Number of components	1	1	1
transistor applications	switch	switch	switch
Transistor component materials	silicon	silicon	silicon
Channel type	P channel	P channel	P channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Transistor type	universal power supply	universal power supply	universal power supply
Maximum leakage current	3 A	3 A	3 A
Rated avalanche energy	190 mJ	190 mJ	190 mJ
Maximum drain on-resistance	1.2 ohm	1.2 ohm	1.2 ohm
Maximum leakage current pulse	12 A	12 A	12 A

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