AP60T06GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
55V
12mΩ
46A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
55
+20
46
29
160
44.6
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Value
2.8
62
Units
℃/W
℃/W
1
201101181
Data and specifications subject to change without notice
AP60T06GP-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=30A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=20A
V
DS
=44V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=20A
V
DS
=48V
V
GS
=10V
V
DS
=30V
I
D
=20A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
55
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
26
-
-
28
6.5
13
11.5
42
20
8
240
140
1
Max. Units
-
12
5
-
25
+100
45
-
-
-
-
-
-
-
-
2
V
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
1380 2200
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=20A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
38
55
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
2
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP60T06GP-HF
160
120
T
C
= 25 C
o
10V
9.0V
8.0V
I
D
, Drain Current (A)
80
T
C
= 150 C
o
10V
9.0V
8.0V
7.0V
I
D
, Drain Current (A)
120
7.0V
80
V
GS
=6.0V
40
V
GS
=6.0V
40
0
0
5
10
15
0
0
4
8
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I
D
=1mA
2.0
I
D
=30A
V
G
=10V
Normalized R
DS(ON)
Normalized BV
DSS
(V)
1.1
1.6
1
1.2
0.9
0.8
0.8
-50
0
50
100
150
0.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
40
2.0
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
I
D
=1mA
1.6
30
Normalized V
GS(th)
(V)
1.4
I
S
(A)
1.2
T
j
=150
o
C
20
T
j
=25
o
C
0.8
10
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP60T06GP-HF
12
2000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
I
D
=20A
V
DS
=30V
V
DS
=36V
V
DS
=48V
C (pF)
1600
C
iss
1200
8
6
800
4
400
2
C
oss
C
rss
1
5
9
13
17
21
25
29
0
0
10
20
30
40
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
I
D
(A)
100us
10
0.1
0.1
1ms
10ms
100ms
DC
0.05
P
DM
t
0.02
0.01
1
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
c
=25
o
C
Single Pulse
0.1
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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