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1N4007

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size36KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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1N4007 Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

1N4007 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current1 A
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N4001 THRU 1N4007
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE:50-1000V
CURRENT:1.0A
FEATURES
·High
reliability
·Low
leakage
·Low
forward voltage drop
·High
current capability
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(0.9)
.028(0.7)
DIA.
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.33 grams
.107(2.7)
.080(2.0)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
units
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 1.0A
DC
@ T
A
=25°C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
=100°C
Maximum Full Load Reverse Current Average
Full Cycle .375”(9.5mm) lead length at T
L
=75°C
Typical Junction Capacitance (Note)
Typical Thermal Resistance
Notes:
V
RRM
V
RMS
V
DC
I
o
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
30
1.1
5.0
A
V
I
R
500
30
µA
C
J
R
θJA
15
50
pF
°C/W
Measured at 1MHz and applied reverse voltage of 4.0 volts
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1N4007 Related Products

1N4007 1N4005 1N4004 1N4006 1N4003
Description 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41
Number of terminals 2 2 2 2 2
Number of components 1 1 1 1 1
Processing package description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 CASE R-1, 2 PIN ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN ALF-2, DO-41, 2 PIN
state ACTIVE ACTIVE ACTIVE ACTIVE TRANSFERRED
packaging shape round round round ROUND round
Package Size LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire Wire WIRE Wire
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Packaging Materials Plastic/Epoxy Plastic/Epoxy UNSPECIFIED PLASTIC/EPOXY Glass
structure single single single SINGLE single
Shell connection isolation isolation isolation ISOLATED isolation
Diode component materials silicon silicon silicon SILICON silicon
Diode type Signal diode Signal diode Signal diode SIGNAL DIODE Signal diode
Maximum average forward current 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 1000 V 600 V 400 V 800 V -
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