1N4006 datasheet, PDF - EEWORLD Datasheet

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1N4006: Description1 A, 800 V, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size36KB，1 Pages; ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.

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1N4006 Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-41

1N4006 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN
state	ACTIVE
packaging shape	ROUND
Package Size	LONG FORM
Terminal form	WIRE
terminal coating	NOT SPECIFIED
Terminal location	AXIAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Shell connection	ISOLATED
Diode component materials	SILICON
Diode type	SIGNAL DIODE
Maximum repetitive peak reverse voltage	800 V
Maximum average forward current	1 A

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CHONGQING PINGYANG ELECTRONICS CO.,LTD.

1N4001 THRU 1N4007

TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER

VOLTAGE：50-1000V

CURRENT：1.0A

FEATURES

·High

reliability

·Low

leakage

·Low

forward voltage drop

·High

current capability

DO-41

1.0(25.4)

MIN.

.205(5.2)

.166(4.2)

.034(0.9)

.028(0.7)

DIA.

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Lead:

MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color

band denotes cathode end

·Mounting

position:

Any

·Weight:

0.33 grams

.107(2.7)

.080(2.0)

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007

units

V

A

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

at T

A

=75°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum Instantaneous forward Voltage at 1.0A

DC

@ T

A

=25°C

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ T

A

=100°C

Maximum Full Load Reverse Current Average

Full Cycle .375”(9.5mm) lead length at T

L

=75°C

Typical Junction Capacitance (Note)

Typical Thermal Resistance

Notes:

V

RRM

V

RMS

V

DC

I

o

50

35

50

100

70

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

1000

I

FSM

V

F

30

1.1

5.0

A

V

I

R

500

30

µA

C

J

R

θJA

15

50

pF

°C/W

Measured at 1MHz and applied reverse voltage of 4.0 volts

１

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1N4006 Related Products

	1N4006	1N4007	1N4005	1N4004	1N4003
Description	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE, DO-41
Number of terminals	2	2	2	2	2
Number of components	1	1	1	1	1
Processing package description	ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	CASE R-1, 2 PIN	ALF-2, DO-41, 2 PIN
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE	TRANSFERRED
packaging shape	ROUND	round	round	round	round
Package Size	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Terminal form	WIRE	Wire	Wire	Wire	Wire
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Packaging Materials	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy	UNSPECIFIED	Glass
structure	SINGLE	single	single	single	single
Shell connection	ISOLATED	isolation	isolation	isolation	isolation
Diode component materials	SILICON	silicon	silicon	silicon	silicon
Diode type	SIGNAL DIODE	Signal diode	Signal diode	Signal diode	Signal diode
Maximum average forward current	1 A	1 A	1 A	1 A	1 A
Maximum repetitive peak reverse voltage	800 V	1000 V	600 V	400 V	-

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