IRF720, SiHF720
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
20
3.3
11
Single
D
FEATURES
400 V
1.8
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
Available
RoHS*
COMPLIANT
TO-220AB
G
DESCRIPTION
G
D
S
S
N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF720PbF
SiHF720-E3
IRF720
SiHF720
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
400
± 20
3.3
2.1
13
0.40
190
3.3
5.0
50
4.0
-55 to +150
300
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
V
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Repetitive Avalanche
Current
a
Energy
a
c
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 30 mH, R
g
= 25
Ω,
I
AS
= 3.3 A (see fig. 12).
c. I
SD
≤
3.3 A, dI/dt
≤
65 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
S14-2355-Rev. C, 08-Dec-14
Document Number: 91043
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF720, SiHF720
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
2.5
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
a
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
=
±
20
V
DS
= 400 V, V
GS
= 0 V
V
DS
= 320 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 2.0 A
b
A
b
V
DS
= 50 V, I
D
= 2.0
400
-
2.0
-
-
-
-
1.7
-
-
-
-
-
-
-
-
-
-
-
0.51
-
-
-
-
-
-
410
120
47
-
-
-
10
14
30
13
4.5
7.5
-
-
4.0
± 100
25
250
1.8
-
-
-
-
20
3.3
11
-
-
-
-
-
V
V/°C
V
nA
μA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
I
D
= 3.3 A,
V
DS
= 320 V,
see fig. 6 and 13
b
pF
V
GS
= 10 V
nC
V
DD
= 200 V, I
D
= 3.3 A
R
g
= 18
Ω,
R
D
= 56
Ω,
see fig. 10
b
Between lead,
6 mm (0.25") from
package and center of
die contact
ns
D
-
-
nH
G
-
S
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
-
-
-
-
-
-
-
-
270
1.4
3.3
A
13
1.6
600
3.0
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 3.3 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 3.3 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 μs; duty cycle
≤
2 %.
S14-2355-Rev. C, 08-Dec-14
Document Number: 91043
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF720, SiHF720
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Vishay Siliconix
10
1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 3.3 A
V
GS
= 10 V
I
D
, Drain Current (A)
10
0
10
-1
4.5 V
10
-2
10
-1
91043_01
20 µs Pulse Width
T
C
=
25 °C
10
0
10
1
0.0
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
91043_04
T
J,
Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
10
1
I
D
, Drain Current (A)
10
0
Capacitance (pF)
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
1000
800
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
4.5 V
600
400
C
oss
C
rss
10
-1
200
20 µs Pulse Width
T
C
=
150 °C
10
0
10
1
91043_05
10
-2
10
-1
91043_02
0
10
0
10
1
V
DS,
Drain-to-Source Voltage (V)
V
DS,
Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
10
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
GS
, Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
I
D
, Drain-to-Source Current (A)
20
I
D
= 3.3 A
V
DS
= 320 V
V
DS
= 200 V
16
1
12
V
DS
= 80 V
8
0.1
4
For test circuit
see figure 13
0.01
4
5
V
DS
= 26.2V
6
7
8
9
V
GS
,
Gate-to-Source
Voltage (V)
10
91043_06
0
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S14-2355-Rev. C, 08-Dec-14
Document Number: 91043
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF720, SiHF720
www.vishay.com
Vishay Siliconix
3.5
3.0
10
1
I
SD
, Reverse Drain Current (A)
I
D
, Drain Current (A)
V
GS
= 0 V
1.2
1.4
91043_09
2.5
2.0
1.5
1.0
0.5
10
0
150
°
C
25
°
C
10
-1
0.4
91043_07
0.0
0.6
0.8
1.0
25
50
75
100
125
150
V
SD
, Source-to-Drain Voltage (V)
T
C
, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
10
2
5
2
Operation in this area limited
by R
DS(on)
10
µs
100
µs
1
ms
10
ms
R
G
V
DS
V
GS
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
I
D
, Drain Current (A)
10
5
2
1
5
2
0.1
5
2
Fig. 10a - Switching Time Test Circuit
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
0.1
2
5
V
DS
5
10
-2
1
2
5
10
2
10
2
2
5
10
3
90 %
91043_08
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
0
−
0.5
0.2
0.1
0.05
P
DM
t
1
Single Pulse
(Thermal Response)
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-2
0.1
1
10
0.1
0.02
0.01
10
-2
10
-5
91043_11
10
-4
10
-3
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S14-2355-Rev. C, 08-Dec-14
Document Number: 91043
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF720, SiHF720
www.vishay.com
Vishay Siliconix
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
V
GS
Q
G
D.U.T
I
AS
+
-
Q
GS
Q
GD
V
DD
V
G
10 V
t
p
0.01
Ω
Charge
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
V
DS
50 kΩ
t
p
V
DD
V
DS
12 V
0.2 µF
0.3 µF
+
D.U.T.
V
GS
-
V
DS
I
AS
3 mA
I
G
I
D
Current sampling resistors
Fig. 12b - Unclamped Inductive Waveforms
Fig. 13b - Gate Charge Test Circuit
500
E
AS
, Single Pulse Energy (mJ)
400
I
D
1.5 A
2.1 A
Bottom 3.3 A
Top
300
200
100
V
DD
= 50 V
25
50
75
100
125
150
0
91043_12c
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
S14-2355-Rev. C, 08-Dec-14
Document Number: 91043
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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