SI4403BDY-T1 datasheet, PDF - EEWORLD Datasheet

SI4403BDY-T1: DescriptionP-Channel 1.8-V (G-S) MOSFET; CategoryDiscrete semiconductor The transistor; File Size43KB，5 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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SI4403BDY-T1 Overview

P-Channel 1.8-V (G-S) MOSFET

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Vishay
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	7.3 A
Maximum drain current (ID)	7.3 A
Maximum drain-source on-resistance	0.017 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	2.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Transistor component materials	SILICON

	SI4403BDY-T1	SI4403BDY
Description	P-Channel 1.8-V (G-S) MOSFET	P-Channel 1.8-V (G-S) MOSFET
Is it Rohs certified?	incompatible	incompatible
Maker	Vishay	Vishay
Reach Compliance Code	unknow	compli
Configuration	SINGLE WITH BUILT-IN DIODE	Single
Maximum drain current (Abs) (ID)	7.3 A	7.3 A
Maximum drain current (ID)	7.3 A	7.3 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	2.5 W	2.5 W
surface mount	YES	YES

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